Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process

Maulid Kivambe, Jan Haschke, Jörg Horzel, Brahim Aissa, Amir Abdallah, Abdelhak Belaidi, Raphaël Monnard, Loris Barraud, Antoine Descoeudres, Fabien Debrot, Matthieu Despeisse, Mathieu Boccard, Christophe Ballif, Nouar Tabet

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.

Original languageEnglish
Pages (from-to)4900-4906
Number of pages7
JournalACS Applied Energy Materials
Volume2
Issue number7
DOIs
Publication statusPublished - 22 Jul 2019

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Keywords

  • cast-mono Si
  • high efficiency
  • monolike Si
  • phosphorus diffusion gettering
  • quasi-mono Si
  • silicon heterojunction solar cell

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Chemical Engineering (miscellaneous)
  • Electrochemistry
  • Materials Chemistry
  • Electrical and Electronic Engineering

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