Abstract
We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.
| Original language | English |
|---|---|
| Pages (from-to) | 4900-4906 |
| Number of pages | 7 |
| Journal | ACS Applied Energy Materials |
| Volume | 2 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 22 Jul 2019 |
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Keywords
- cast-mono Si
- high efficiency
- monolike Si
- phosphorus diffusion gettering
- quasi-mono Si
- silicon heterojunction solar cell
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Chemical Engineering (miscellaneous)
- Electrochemistry
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process. / Kivambe, Maulid; Haschke, Jan; Horzel, Jörg; Aissa, Brahim; Abdallah, Amir; Belaidi, Abdelhak; Monnard, Raphaël; Barraud, Loris; Descoeudres, Antoine; Debrot, Fabien; Despeisse, Matthieu; Boccard, Mathieu; Ballif, Christophe; Tabet, Nouar.
In: ACS Applied Energy Materials, Vol. 2, No. 7, 22.07.2019, p. 4900-4906.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Record-Efficiency n-Type and High-Efficiency p-Type Monolike Silicon Heterojunction Solar Cells with a High-Temperature Gettering Process
AU - Kivambe, Maulid
AU - Haschke, Jan
AU - Horzel, Jörg
AU - Aissa, Brahim
AU - Abdallah, Amir
AU - Belaidi, Abdelhak
AU - Monnard, Raphaël
AU - Barraud, Loris
AU - Descoeudres, Antoine
AU - Debrot, Fabien
AU - Despeisse, Matthieu
AU - Boccard, Mathieu
AU - Ballif, Christophe
AU - Tabet, Nouar
PY - 2019/7/22
Y1 - 2019/7/22
N2 - We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.
AB - We report independently confirmed 22.15% and record 22.58% power conversion efficiencies for thin (130-140 μm) p-type and n-type monolike Si solar cells, respectively. We comparatively assessed advanced n-type and p-type monolike silicon wafers for potential use in low-cost, high-efficiency solar cell applications by using phosphorus diffusion gettering for material-quality improvement and silicon heterojunction solar cell fabrication for assessment of performance in high-efficiency photovoltaic device architecture. We show that gettering improves material quality and device properties significantly, depending on the type of doping (n-type or p-type), wafer position in the ingot, drive-in temperature, and cooling profile. Owing to the high open circuit voltage (725 mV), the record n-type solar cell also represents the highest reported solar cell efficiency for cast silicon to date.
KW - cast-mono Si
KW - high efficiency
KW - monolike Si
KW - phosphorus diffusion gettering
KW - quasi-mono Si
KW - silicon heterojunction solar cell
UR - http://www.scopus.com/inward/record.url?scp=85070553275&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85070553275&partnerID=8YFLogxK
U2 - 10.1021/acsaem.9b00608
DO - 10.1021/acsaem.9b00608
M3 - Article
VL - 2
SP - 4900
EP - 4906
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
SN - 2574-0962
IS - 7
ER -