Recombination stability in polycrystalline Cu2ZnSnSe4 thin films

Marie Buffiere, Guy Brammertz, Abdel Aziz El Mel, Nick Lenaers, Yi Ren, Armin E. Zaghi, Yves Mols, Christine Koeble, Jef Vleugels, Marc Meuris, Jef Poortmans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

Time-resolved photoluminescence analysis shows that as-grown Cu 2ZnSnSe4 (CZTSe) thin films degrade when they are exposed to air. The analysis of the films prior to degradation reveals relatively long carrier lifetimes. The increase of the recombination rates significantly affects the performance of the related solar cells. Among all the chemical treatments tested to recover the lifetime of the carrier after air exposure, the KCN etching seems to be the most efficient.

Original languageEnglish
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1941-1944
Number of pages4
ISBN (Print)9781479932993
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: 16 Jun 201321 Jun 2013

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period16/6/1321/6/13

Fingerprint

Thin films
Carrier lifetime
Air
Etching
Solar cells
Photoluminescence
Degradation

Keywords

  • Charge carrier lifetime
  • CZTSe
  • Solar cells
  • Surface properties
  • Thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Buffiere, M., Brammertz, G., Mel, A. A. E., Lenaers, N., Ren, Y., Zaghi, A. E., ... Poortmans, J. (2013). Recombination stability in polycrystalline Cu2ZnSnSe4 thin films. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013 (pp. 1941-1944). [6744850] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2013.6744850

Recombination stability in polycrystalline Cu2ZnSnSe4 thin films. / Buffiere, Marie; Brammertz, Guy; Mel, Abdel Aziz El; Lenaers, Nick; Ren, Yi; Zaghi, Armin E.; Mols, Yves; Koeble, Christine; Vleugels, Jef; Meuris, Marc; Poortmans, Jef.

39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. p. 1941-1944 6744850.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Buffiere, M, Brammertz, G, Mel, AAE, Lenaers, N, Ren, Y, Zaghi, AE, Mols, Y, Koeble, C, Vleugels, J, Meuris, M & Poortmans, J 2013, Recombination stability in polycrystalline Cu2ZnSnSe4 thin films. in 39th IEEE Photovoltaic Specialists Conference, PVSC 2013., 6744850, Institute of Electrical and Electronics Engineers Inc., pp. 1941-1944, 39th IEEE Photovoltaic Specialists Conference, PVSC 2013, Tampa, FL, United States, 16/6/13. https://doi.org/10.1109/PVSC.2013.6744850
Buffiere M, Brammertz G, Mel AAE, Lenaers N, Ren Y, Zaghi AE et al. Recombination stability in polycrystalline Cu2ZnSnSe4 thin films. In 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc. 2013. p. 1941-1944. 6744850 https://doi.org/10.1109/PVSC.2013.6744850
Buffiere, Marie ; Brammertz, Guy ; Mel, Abdel Aziz El ; Lenaers, Nick ; Ren, Yi ; Zaghi, Armin E. ; Mols, Yves ; Koeble, Christine ; Vleugels, Jef ; Meuris, Marc ; Poortmans, Jef. / Recombination stability in polycrystalline Cu2ZnSnSe4 thin films. 39th IEEE Photovoltaic Specialists Conference, PVSC 2013. Institute of Electrical and Electronics Engineers Inc., 2013. pp. 1941-1944
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