Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor

Fang Tang, Amine Bermak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A detailed read-out circuit analysis of the VCO based APS CMOS image sensor is presented in this paper. According to the mathematic analysis and simulation results, the read-out speed should be decreased when reducing the bias current. Moreover, the feature of the device gain factor and the source follower's threshold voltage are investigated, showing important effects with respect to not only the read-out time but also the energy consumption. The proposed VCO based read-out circuit and frequency counter consist an equivalent bandpass filter. According to the transfer function analysis of this equivalent filter, the noise cancellation efficiency is jointly determined by the bias current, device gain factor and source follower's threshold voltage, which constitute the basic principles for high-speed low-noise CMOS APS image sensor design.

Original languageEnglish
Title of host publicationProceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010
Pages330-335
Number of pages6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010 - Ho Chi Minh City, Viet Nam
Duration: 13 Jan 201015 Jan 2010

Other

Other5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010
CountryViet Nam
CityHo Chi Minh City
Period13/1/1015/1/10

Fingerprint

Bias currents
Variable frequency oscillators
Electric network analysis
Threshold voltage
Image sensors
Bandpass filters
Transfer functions
Energy utilization
Networks (circuits)

Keywords

  • APS imager
  • CMOS image sensor
  • High speed
  • Low noise

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tang, F., & Bermak, A. (2010). Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor. In Proceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010 (pp. 330-335). [5438668] https://doi.org/10.1109/DELTA.2010.11

Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor. / Tang, Fang; Bermak, Amine.

Proceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010. 2010. p. 330-335 5438668.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tang, F & Bermak, A 2010, Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor. in Proceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010., 5438668, pp. 330-335, 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010, Ho Chi Minh City, Viet Nam, 13/1/10. https://doi.org/10.1109/DELTA.2010.11
Tang F, Bermak A. Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor. In Proceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010. 2010. p. 330-335. 5438668 https://doi.org/10.1109/DELTA.2010.11
Tang, Fang ; Bermak, Amine. / Read-out circuit analysis for high-speed low-noise VCO based APS CMOS image sensor. Proceedings - 5th IEEE International Symposium on Electronic Design, Test and Applications, DELTA 2010. 2010. pp. 330-335
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