Reactions of hydrogen with Si-SiO 2 interfaces

S. T. Pantelides, Sergey Rashkeev, R. Buczko, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticle

123 Citations (Scopus)

Abstract

Radiation experiments have established that H + released in SiO 2 migrates to the Si-SiO 2 interface where it can induce new defects. For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H + can be cycled to and from the interface by reversing the oxide electric field. We report first-principles calculations that identify atomic-scale mechanisms for the two types of behavior and the conditions that are necessary for each. Si-Si bonds on the oxide side, i.e., "suboxide bonds," can trap H+ in deep wells with an asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO 2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposing Si-SiO 2 interfaces if the density of suboxide bonds is high.

Original languageEnglish
Pages (from-to)2262-2268
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
Publication statusPublished - 1 Dec 2000
Externally publishedYes

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Hydrogen
Oxides
oxides
hydrogen
Radiation
reversing
Experiments
radiation
Protons
Electric fields
traps
Annealing
Defects
annealing
protons
electric fields
defects
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering

Cite this

Pantelides, S. T., Rashkeev, S., Buczko, R., Fleetwood, D. M., & Schrimpf, R. D. (2000). Reactions of hydrogen with Si-SiO 2 interfaces. IEEE Transactions on Nuclear Science, 47(6 III), 2262-2268. https://doi.org/10.1109/23.903763

Reactions of hydrogen with Si-SiO 2 interfaces. / Pantelides, S. T.; Rashkeev, Sergey; Buczko, R.; Fleetwood, D. M.; Schrimpf, R. D.

In: IEEE Transactions on Nuclear Science, Vol. 47, No. 6 III, 01.12.2000, p. 2262-2268.

Research output: Contribution to journalArticle

Pantelides, ST, Rashkeev, S, Buczko, R, Fleetwood, DM & Schrimpf, RD 2000, 'Reactions of hydrogen with Si-SiO 2 interfaces', IEEE Transactions on Nuclear Science, vol. 47, no. 6 III, pp. 2262-2268. https://doi.org/10.1109/23.903763
Pantelides ST, Rashkeev S, Buczko R, Fleetwood DM, Schrimpf RD. Reactions of hydrogen with Si-SiO 2 interfaces. IEEE Transactions on Nuclear Science. 2000 Dec 1;47(6 III):2262-2268. https://doi.org/10.1109/23.903763
Pantelides, S. T. ; Rashkeev, Sergey ; Buczko, R. ; Fleetwood, D. M. ; Schrimpf, R. D. / Reactions of hydrogen with Si-SiO 2 interfaces. In: IEEE Transactions on Nuclear Science. 2000 ; Vol. 47, No. 6 III. pp. 2262-2268.
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