Reactions of hydrogen with Si-SiO 2 interfaces

S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalConference article

124 Citations (Scopus)

Abstract

Radiation experiments have established that H + released in SiO 2 migrates to the Si-SiO 2 interface where it can induce new defects. For oxides exposed first to high-temperature annealing and then to molecular hydrogen, mobile positive charge believed to be H + can be cycled to and from the interface by reversing the oxide electric field. We report first-principles calculations that identify atomic-scale mechanisms for the two types of behavior and the conditions that are necessary for each. Si-Si bonds on the oxide side, i.e., "suboxide bonds," can trap H+ in deep wells with an asymmetric barrier (1.5 eV on the Si side, 1 eV on the SiO 2 side). In radiation experiments these centers can act as fixed positive charge. In the mobile-positive-charge experiments, the protons can be cycled between opposing Si-SiO 2 interfaces if the density of suboxide bonds is high.

Original languageEnglish
Pages (from-to)2262-2268
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume47
Issue number6 III
DOIs
Publication statusPublished - 1 Dec 2000
Event2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC) - Reno, NV, United States
Duration: 24 Jul 200028 Jul 2000

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Pantelides, S. T., Rashkeev, S. N., Buczko, R., Fleetwood, D. M., & Schrimpf, R. D. (2000). Reactions of hydrogen with Si-SiO 2 interfaces. IEEE Transactions on Nuclear Science, 47(6 III), 2262-2268. https://doi.org/10.1109/23.903763