Randomly oriented graphene flakes film fabrication from graphite dispersed in N-methyl-pyrrolidone by using electrohydrodynamic atomization technique

Kyung Hyun Choi, Adnan Ali, Jeongdai Jo

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this work, we report the deposition of graphene flakes exfoliated through graphite dispersion in N-methyl-pyrrolidone using non-vacuum electrohydrodynamic atomization (EHDA) technique. Stable cone jet mode of EHDA is used to deposit graphene flakes on silicon substrate. The deposited graphene flakes film is characterized by Raman spectroscopy, microscopy, 3D-Nanomap, scanning electron microscope, and UV-visible spectroscopy. Through characterizations it is evident that a randomly oriented graphene flakes film has shown good transparency, conductivity and suitable work function. For electrical characterization of film, it is employed as cathode in a simple diode indium tin oxide/(poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ polydioctylfluorene-benzothiadiazole/graphene. It is observed that at voltage of 0.3 V, the current density in device is at low value of 2.67 A/cm2 however as the voltage is increased to a value of 4 V the current density is increased by almost 100 times and reaches up to 2.65 × 102 A/cm2. We believe that by further optimizing parameters of EHDA techniques for graphene deposition, more uniform and defect free graphene film can be obtained.

Original languageEnglish
Pages (from-to)4893-4900
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume24
Issue number12
DOIs
Publication statusPublished - Dec 2013
Externally publishedYes

Fingerprint

Electrohydrodynamics
electrohydrodynamics
Graphite
flakes
atomizing
Atomization
Graphene
graphene
graphite
Fabrication
fabrication
Current density
current density
Electric potential
electric potential
N-methylpyrrolidone
Tin oxides
indium oxides
Transparency
Indium

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "In this work, we report the deposition of graphene flakes exfoliated through graphite dispersion in N-methyl-pyrrolidone using non-vacuum electrohydrodynamic atomization (EHDA) technique. Stable cone jet mode of EHDA is used to deposit graphene flakes on silicon substrate. The deposited graphene flakes film is characterized by Raman spectroscopy, microscopy, 3D-Nanomap, scanning electron microscope, and UV-visible spectroscopy. Through characterizations it is evident that a randomly oriented graphene flakes film has shown good transparency, conductivity and suitable work function. For electrical characterization of film, it is employed as cathode in a simple diode indium tin oxide/(poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ polydioctylfluorene-benzothiadiazole/graphene. It is observed that at voltage of 0.3 V, the current density in device is at low value of 2.67 A/cm2 however as the voltage is increased to a value of 4 V the current density is increased by almost 100 times and reaches up to 2.65 × 102 A/cm2. We believe that by further optimizing parameters of EHDA techniques for graphene deposition, more uniform and defect free graphene film can be obtained.",
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AU - Ali, Adnan

AU - Jo, Jeongdai

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AB - In this work, we report the deposition of graphene flakes exfoliated through graphite dispersion in N-methyl-pyrrolidone using non-vacuum electrohydrodynamic atomization (EHDA) technique. Stable cone jet mode of EHDA is used to deposit graphene flakes on silicon substrate. The deposited graphene flakes film is characterized by Raman spectroscopy, microscopy, 3D-Nanomap, scanning electron microscope, and UV-visible spectroscopy. Through characterizations it is evident that a randomly oriented graphene flakes film has shown good transparency, conductivity and suitable work function. For electrical characterization of film, it is employed as cathode in a simple diode indium tin oxide/(poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ polydioctylfluorene-benzothiadiazole/graphene. It is observed that at voltage of 0.3 V, the current density in device is at low value of 2.67 A/cm2 however as the voltage is increased to a value of 4 V the current density is increased by almost 100 times and reaches up to 2.65 × 102 A/cm2. We believe that by further optimizing parameters of EHDA techniques for graphene deposition, more uniform and defect free graphene film can be obtained.

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