Raman study of localized recrystallization of amorphous silicon induced by laser beam

Nouar Tabet, Abduljabar Al-Sayoud, Seyed Said, Xiaoming Yang, Yang Yang, A. Syed, El Haj Diallo, Zhihong Wang, Xianbin Wang, Eric Johlin, Christine Simmons, Tonio Buonassisi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages364-366
Number of pages3
DOIs
Publication statusPublished - 26 Nov 2012
Externally publishedYes
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 3 Jun 20128 Jun 2012

Other

Other38th IEEE Photovoltaic Specialists Conference, PVSC 2012
CountryUnited States
CityAustin, TX
Period3/6/128/6/12

Fingerprint

Amorphous silicon
Laser beams
Crystallization
Solar cells
Silicon
Hole mobility
Plasma enhanced chemical vapor deposition
Raman scattering
Lasers
Substrates

Keywords

  • amorphous silicon
  • Raman
  • recrystallization
  • stresses

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Tabet, N., Al-Sayoud, A., Said, S., Yang, X., Yang, Y., Syed, A., ... Buonassisi, T. (2012). Raman study of localized recrystallization of amorphous silicon induced by laser beam. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 364-366). [6317637] https://doi.org/10.1109/PVSC.2012.6317637

Raman study of localized recrystallization of amorphous silicon induced by laser beam. / Tabet, Nouar; Al-Sayoud, Abduljabar; Said, Seyed; Yang, Xiaoming; Yang, Yang; Syed, A.; Diallo, El Haj; Wang, Zhihong; Wang, Xianbin; Johlin, Eric; Simmons, Christine; Buonassisi, Tonio.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 364-366 6317637.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tabet, N, Al-Sayoud, A, Said, S, Yang, X, Yang, Y, Syed, A, Diallo, EH, Wang, Z, Wang, X, Johlin, E, Simmons, C & Buonassisi, T 2012, Raman study of localized recrystallization of amorphous silicon induced by laser beam. in Conference Record of the IEEE Photovoltaic Specialists Conference., 6317637, pp. 364-366, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/6/12. https://doi.org/10.1109/PVSC.2012.6317637
Tabet N, Al-Sayoud A, Said S, Yang X, Yang Y, Syed A et al. Raman study of localized recrystallization of amorphous silicon induced by laser beam. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. p. 364-366. 6317637 https://doi.org/10.1109/PVSC.2012.6317637
Tabet, Nouar ; Al-Sayoud, Abduljabar ; Said, Seyed ; Yang, Xiaoming ; Yang, Yang ; Syed, A. ; Diallo, El Haj ; Wang, Zhihong ; Wang, Xianbin ; Johlin, Eric ; Simmons, Christine ; Buonassisi, Tonio. / Raman study of localized recrystallization of amorphous silicon induced by laser beam. Conference Record of the IEEE Photovoltaic Specialists Conference. 2012. pp. 364-366
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AB - The adoption of amorphous silicon based solar cells has been drastically hindered by the low efficiency of these devices, which is mainly due to a low hole mobility. It has been shown that using both crystallized and amorphous silicon layers in solar cells leads to an enhancement of the device performance. In this study the crystallization of a-Si prepared by PECVD under various growth conditions has been investigated. The growth stresses in the films are determined by measuring the curvature change of the silicon substrate before and after film deposition. Localized crystallization is induced by exposing a-Si films to focused 532 nm laser beam of power ranging from 0.08 to 8 mW. The crystallization process is monitored by recording the Raman spectra after various exposures. The results suggest that growth stresses in the films affect the minimum laser power (threshold power). In addition, a detailed analysis of the width and position of the Raman signal indicates that the silicon grains in the crystallized regions are of few nm diameter.

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