Radiation-induced acceptor deactivation in bipolar devices

Effects of electric field

Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The physical mechanisms responsible for radiation-induced dopant passivation at different values of irradiation bias in bipolar devices are described. The neutralization of acceptors near the interface is related to the interplay between the drift and diffusion of protons in the depletion region. The neutralization of protons is not necessary to explain the observed dependence of the neutralized-acceptor concentration on the irradiation bias.

Original languageEnglish
Pages (from-to)4646-4648
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number22
DOIs
Publication statusPublished - 1 Dec 2003
Externally publishedYes

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deactivation
irradiation
protons
electric fields
radiation
passivity
depletion

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Radiation-induced acceptor deactivation in bipolar devices : Effects of electric field. / Rashkeev, Sergey; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.

In: Applied Physics Letters, Vol. 83, No. 22, 01.12.2003, p. 4646-4648.

Research output: Contribution to journalArticle

Rashkeev, Sergey ; Fleetwood, D. M. ; Schrimpf, R. D. ; Pantelides, S. T. / Radiation-induced acceptor deactivation in bipolar devices : Effects of electric field. In: Applied Physics Letters. 2003 ; Vol. 83, No. 22. pp. 4646-4648.
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