The physical mechanisms responsible for radiation-induced dopant passivation at different values of irradiation bias in bipolar devices are described. The neutralization of acceptors near the interface is related to the interplay between the drift and diffusion of protons in the depletion region. The neutralization of protons is not necessary to explain the observed dependence of the neutralized-acceptor concentration on the irradiation bias.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)