Radiation-Hardened CMOS Negative Voltage Reference for Aerospace Application

Fan Liu, Feng Yang, Han Wang, Xun Xiang, Xichuan Zhou, Shengdong Hu, Zhi Lin, Amine Bermak, Fang Tang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Voltage reference is the key module in analog and mixed-signal integrated circuits. This paper presents a radiation-hardened CMOS negative voltage reference for aerospace electronics. To improve the antiradiation performance, in the circuit design, the input pair of the operational amplifier is replaced from pMOS to nMOS. An extra unity-gain amplification stage is added and the compensation network is optimized. Besides, the start-up circuit is redesigned. In the layout design, the annular-gate structure is adopted to eliminate electric leakage, while the layout technique against single-event latch-up is also used. The prototype of the proposed circuit is fabricated using a bulk CMOS 0.6-μm process with a 547μm× 618μm chip area. By using the proposed circuit and layout optimizations, the measured temperature coefficient of reference is reduced to 13 ppm/°C and the output voltage drift is below 1.2% after 300-krad(Si) total ionizing dose. The measured single-event latch-up threshold is above 94.6 MeVcm2/mg.

Original languageEnglish
Article number7997771
Pages (from-to)2505-2510
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number9
DOIs
Publication statusPublished - 1 Sep 2017

    Fingerprint

Keywords

  • Aerospace electronics
  • analog integrated circuit
  • CMOS voltage reference
  • radiation hardening
  • single-event latch-up
  • voltage drift

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Liu, F., Yang, F., Wang, H., Xiang, X., Zhou, X., Hu, S., Lin, Z., Bermak, A., & Tang, F. (2017). Radiation-Hardened CMOS Negative Voltage Reference for Aerospace Application. IEEE Transactions on Nuclear Science, 64(9), 2505-2510. [7997771]. https://doi.org/10.1109/TNS.2017.2733738