Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques

V. Shutthanandan, S. Thevuthasan, T. Droubay, T. C. Kaspar, A. Punnoose, J. Hays, S. A. Chambers

    Research output: Contribution to journalArticle

    Abstract

    It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.

    Original languageEnglish
    Pages (from-to)402-405
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume249
    Issue number1-2 SPEC. ISS.
    DOIs
    Publication statusPublished - 1 Aug 2006

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    Keywords

    • Implantation
    • MBE
    • PIXE
    • RBS
    • Spintronics
    • Wet chemical synthesis

    ASJC Scopus subject areas

    • Nuclear and High Energy Physics
    • Instrumentation

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