Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques

V. Shutthanandan, S. Thevuthasan, T. Droubay, T. C. Kaspar, A. Punnoose, J. Hays, S. A. Chambers

Research output: Contribution to journalArticle

Abstract

It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.

Original languageEnglish
Pages (from-to)402-405
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume249
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - Aug 2006
Externally publishedYes

Fingerprint

Magnetic semiconductors
Ion beams
ion beams
Doping (additives)
backscattering
Rutherford backscattering spectroscopy
room temperature
transition metals
Chemical elements
Spectrometry
magnetic metals
Transition Elements
ferromagnetic materials
oxygen plasma
synthesis
spectroscopy
ferromagnetism
Ferromagnetic materials
ion implantation
Curie temperature

Keywords

  • Implantation
  • MBE
  • PIXE
  • RBS
  • Spintronics
  • Wet chemical synthesis

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques. / Shutthanandan, V.; Thevuthasan, S.; Droubay, T.; Kaspar, T. C.; Punnoose, A.; Hays, J.; Chambers, S. A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 249, No. 1-2 SPEC. ISS., 08.2006, p. 402-405.

Research output: Contribution to journalArticle

Shutthanandan, V. ; Thevuthasan, S. ; Droubay, T. ; Kaspar, T. C. ; Punnoose, A. ; Hays, J. ; Chambers, S. A. / Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2006 ; Vol. 249, No. 1-2 SPEC. ISS. pp. 402-405.
@article{bc07282570a7448f978acb2f626eefca,
title = "Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques",
abstract = "It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.",
keywords = "Implantation, MBE, PIXE, RBS, Spintronics, Wet chemical synthesis",
author = "V. Shutthanandan and S. Thevuthasan and T. Droubay and Kaspar, {T. C.} and A. Punnoose and J. Hays and Chambers, {S. A.}",
year = "2006",
month = "8",
doi = "10.1016/j.nimb.2006.04.038",
language = "English",
volume = "249",
pages = "402--405",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Quantification of dopant concentrations in dilute magnetic semiconductors using ion beam techniques

AU - Shutthanandan, V.

AU - Thevuthasan, S.

AU - Droubay, T.

AU - Kaspar, T. C.

AU - Punnoose, A.

AU - Hays, J.

AU - Chambers, S. A.

PY - 2006/8

Y1 - 2006/8

N2 - It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.

AB - It has recently been demonstrated that magnetically doped TiO2 and SnO2 show ferromagnetism at room temperature and Curie temperatures above room temperature. However, accurate knowledge of dopant concentrations is necessary to quantify magnetic moments in these materials. Rutherford backscattering spectrometry (RBS) is one of the powerful techniques to quantify magnetic transition-metal dopant concentrations in these materials. However, in some cases, the interference of RBS signals for different dopants and substrate elements in these materials makes analysis difficult. In this work, we demonstrate that particle induced X-ray emission (PIXE) can be successfully used to quantify the magnetic transition-element dopants in several room temperature ferromagnetic materials synthesized using three different synthesis methods: oxygen plasma-assisted molecular-beam epitaxy, ion implantation and wet chemical synthesis.

KW - Implantation

KW - MBE

KW - PIXE

KW - RBS

KW - Spintronics

KW - Wet chemical synthesis

UR - http://www.scopus.com/inward/record.url?scp=33745960776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745960776&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.04.038

DO - 10.1016/j.nimb.2006.04.038

M3 - Article

AN - SCOPUS:33745960776

VL - 249

SP - 402

EP - 405

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2 SPEC. ISS.

ER -