Properties of structurally excellent N-doped TiO2 rutile

S. A. Chambers, S. H. Cheung, V. Shutthanandan, S. Thevuthasan, M. K. Bowman, A. G. Joly

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

We have used plasma-assisted molecular beam epitaxy to synthesize structurally near-perfect crystalline films of TiO2-xNx rutile for the first time. These materials allow the properties of TiO2-xNx to be elucidated without the interfering effects of bulk substoichiometric defects that have characterized previous investigations. In the absence of such defects, the extent of N incorporation in the lattice is limited to ∼2 ± 1 at.% of the anions. Substitutional N (NO) exhibits a -3 formal charge due to charge transfer from shallow-donor interstitial Ti(III), which forms during epitaxial growth. Hybridization between NO and adjacent lattice Ti ions occurs, resulting in new states at the top of the rutile valence band and an apparent band gap reduction of ∼0.6 eV.

Original languageEnglish
Pages (from-to)27-35
Number of pages9
JournalChemical Physics
Volume339
Issue number1-3
DOIs
Publication statusPublished - 15 Oct 2007
Externally publishedYes

Fingerprint

rutile
Defects
defects
Valence bands
Epitaxial growth
Molecular beam epitaxy
Crystal lattices
Anions
Charge transfer
interstitials
Energy gap
molecular beam epitaxy
charge transfer
Ions
Crystalline materials
anions
valence
Plasmas
ions
titanium dioxide

Keywords

  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

Cite this

Chambers, S. A., Cheung, S. H., Shutthanandan, V., Thevuthasan, S., Bowman, M. K., & Joly, A. G. (2007). Properties of structurally excellent N-doped TiO2 rutile. Chemical Physics, 339(1-3), 27-35. https://doi.org/10.1016/j.chemphys.2007.04.024

Properties of structurally excellent N-doped TiO2 rutile. / Chambers, S. A.; Cheung, S. H.; Shutthanandan, V.; Thevuthasan, S.; Bowman, M. K.; Joly, A. G.

In: Chemical Physics, Vol. 339, No. 1-3, 15.10.2007, p. 27-35.

Research output: Contribution to journalArticle

Chambers, SA, Cheung, SH, Shutthanandan, V, Thevuthasan, S, Bowman, MK & Joly, AG 2007, 'Properties of structurally excellent N-doped TiO2 rutile', Chemical Physics, vol. 339, no. 1-3, pp. 27-35. https://doi.org/10.1016/j.chemphys.2007.04.024
Chambers SA, Cheung SH, Shutthanandan V, Thevuthasan S, Bowman MK, Joly AG. Properties of structurally excellent N-doped TiO2 rutile. Chemical Physics. 2007 Oct 15;339(1-3):27-35. https://doi.org/10.1016/j.chemphys.2007.04.024
Chambers, S. A. ; Cheung, S. H. ; Shutthanandan, V. ; Thevuthasan, S. ; Bowman, M. K. ; Joly, A. G. / Properties of structurally excellent N-doped TiO2 rutile. In: Chemical Physics. 2007 ; Vol. 339, No. 1-3. pp. 27-35.
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