Properties of gallium disorder and gold implants in GaN

W. Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Epitaxial single-crystal GaN films on sapphire were implanted 60° off the <0001> surface normal with 1 MeV Au 2+ or 3 MeV Au 3+ over a fluence range from 0.88 to 86.2 ions/nm 2 at 180 and 300 K. The implantation damage was studied in-situ using 2 MeV He + Rutherford backscattering spectrometry in channeling geometry (RBS/C). The disordering rate in the near-surface region is faster than at the damage peak. In all cases, results show an intermediate stage of Ga disorder saturation at the damage peak. During the thermal annealing at 870 K for 20 min, some Au implants in GaN diffuse into the amorphized surface region, while the remaining Au atoms distribute around the mean ion-projected-range. These results suggest a high mobility of both Ga defects and Au implants in GaN. Deeper damage implantation by 3 MeV Au 3+ indicates that GaN cannot be completely amorphized up to the highest ion fluence (86.2 ions/nm 2) applied at 300 K.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsS.C. Moss, K. Heinig, D.B. Poker
Volume647
Publication statusPublished - 2001
Externally publishedYes
EventIon Beam Synthesis and Processing of Advanced Materials - Boston, MA, United States
Duration: 27 Nov 200029 Nov 2000

Other

OtherIon Beam Synthesis and Processing of Advanced Materials
CountryUnited States
CityBoston, MA
Period27/11/0029/11/00

Fingerprint

Gallium
Gold
Ions
Aluminum Oxide
Rutherford backscattering spectroscopy
Sapphire
Spectrometry
Single crystals
Annealing
Atoms
Defects
Geometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, W., Weber, W. J., Thevuthasan, S., & Shutthanandan, V. (2001). Properties of gallium disorder and gold implants in GaN. In S. C. Moss, K. Heinig, & D. B. Poker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 647)

Properties of gallium disorder and gold implants in GaN. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Shutthanandan, V.

Materials Research Society Symposium - Proceedings. ed. / S.C. Moss; K. Heinig; D.B. Poker. Vol. 647 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jiang, W, Weber, WJ, Thevuthasan, S & Shutthanandan, V 2001, Properties of gallium disorder and gold implants in GaN. in SC Moss, K Heinig & DB Poker (eds), Materials Research Society Symposium - Proceedings. vol. 647, Ion Beam Synthesis and Processing of Advanced Materials, Boston, MA, United States, 27/11/00.
Jiang W, Weber WJ, Thevuthasan S, Shutthanandan V. Properties of gallium disorder and gold implants in GaN. In Moss SC, Heinig K, Poker DB, editors, Materials Research Society Symposium - Proceedings. Vol. 647. 2001
Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; Shutthanandan, V. / Properties of gallium disorder and gold implants in GaN. Materials Research Society Symposium - Proceedings. editor / S.C. Moss ; K. Heinig ; D.B. Poker. Vol. 647 2001.
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