Processes for chalcopyrite-based solar cells

M. Ch Lux-Steiner, A. Ennaoui, Ch H. Fischer, A. Jäger-Waldau, J. Klaer, R. Klenk, R. Könenkamp, Th Matthes, R. Scheer, S. Siebentritt, A. Weidinger

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimize stoichiometric CuInS2 films, novel deposition technologies for CuGaSe2 films and buffer layers as well as alternative buffer layers were studied and compared. With ZnSe as alternative buffer layer on Cu(InGa)(S,Se)2 absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13.7% and active area efficiencies up to 15.7% could be reached, respectively. For CuInS2 two important results were achieved. The efficiency of Cu-poor CuInS2 cells could be increased to 8.3%. Standard Cu-rich prepared devices led to a new record efficiency of 12.5%.

Original languageEnglish
Pages (from-to)533-539
Number of pages7
JournalThin Solid Films
Volume361
DOIs
Publication statusPublished - 21 Feb 2000
Externally publishedYes

Fingerprint

Solar cells
Buffer layers
solar cells
buffers
absorbers (materials)
absorbers
Energy gap
chalcopyrite
cells

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Lux-Steiner, M. C., Ennaoui, A., Fischer, C. H., Jäger-Waldau, A., Klaer, J., Klenk, R., ... Weidinger, A. (2000). Processes for chalcopyrite-based solar cells. Thin Solid Films, 361, 533-539. https://doi.org/10.1016/S0040-6090(99)00826-3

Processes for chalcopyrite-based solar cells. / Lux-Steiner, M. Ch; Ennaoui, A.; Fischer, Ch H.; Jäger-Waldau, A.; Klaer, J.; Klenk, R.; Könenkamp, R.; Matthes, Th; Scheer, R.; Siebentritt, S.; Weidinger, A.

In: Thin Solid Films, Vol. 361, 21.02.2000, p. 533-539.

Research output: Contribution to journalArticle

Lux-Steiner, MC, Ennaoui, A, Fischer, CH, Jäger-Waldau, A, Klaer, J, Klenk, R, Könenkamp, R, Matthes, T, Scheer, R, Siebentritt, S & Weidinger, A 2000, 'Processes for chalcopyrite-based solar cells', Thin Solid Films, vol. 361, pp. 533-539. https://doi.org/10.1016/S0040-6090(99)00826-3
Lux-Steiner MC, Ennaoui A, Fischer CH, Jäger-Waldau A, Klaer J, Klenk R et al. Processes for chalcopyrite-based solar cells. Thin Solid Films. 2000 Feb 21;361:533-539. https://doi.org/10.1016/S0040-6090(99)00826-3
Lux-Steiner, M. Ch ; Ennaoui, A. ; Fischer, Ch H. ; Jäger-Waldau, A. ; Klaer, J. ; Klenk, R. ; Könenkamp, R. ; Matthes, Th ; Scheer, R. ; Siebentritt, S. ; Weidinger, A. / Processes for chalcopyrite-based solar cells. In: Thin Solid Films. 2000 ; Vol. 361. pp. 533-539.
@article{82f0640dfe3b42e08896df0bae0f9653,
title = "Processes for chalcopyrite-based solar cells",
abstract = "This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimize stoichiometric CuInS2 films, novel deposition technologies for CuGaSe2 films and buffer layers as well as alternative buffer layers were studied and compared. With ZnSe as alternative buffer layer on Cu(InGa)(S,Se)2 absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13.7{\%} and active area efficiencies up to 15.7{\%} could be reached, respectively. For CuInS2 two important results were achieved. The efficiency of Cu-poor CuInS2 cells could be increased to 8.3{\%}. Standard Cu-rich prepared devices led to a new record efficiency of 12.5{\%}.",
author = "Lux-Steiner, {M. Ch} and A. Ennaoui and Fischer, {Ch H.} and A. J{\"a}ger-Waldau and J. Klaer and R. Klenk and R. K{\"o}nenkamp and Th Matthes and R. Scheer and S. Siebentritt and A. Weidinger",
year = "2000",
month = "2",
day = "21",
doi = "10.1016/S0040-6090(99)00826-3",
language = "English",
volume = "361",
pages = "533--539",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Processes for chalcopyrite-based solar cells

AU - Lux-Steiner, M. Ch

AU - Ennaoui, A.

AU - Fischer, Ch H.

AU - Jäger-Waldau, A.

AU - Klaer, J.

AU - Klenk, R.

AU - Könenkamp, R.

AU - Matthes, Th

AU - Scheer, R.

AU - Siebentritt, S.

AU - Weidinger, A.

PY - 2000/2/21

Y1 - 2000/2/21

N2 - This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimize stoichiometric CuInS2 films, novel deposition technologies for CuGaSe2 films and buffer layers as well as alternative buffer layers were studied and compared. With ZnSe as alternative buffer layer on Cu(InGa)(S,Se)2 absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13.7% and active area efficiencies up to 15.7% could be reached, respectively. For CuInS2 two important results were achieved. The efficiency of Cu-poor CuInS2 cells could be increased to 8.3%. Standard Cu-rich prepared devices led to a new record efficiency of 12.5%.

AB - This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimize stoichiometric CuInS2 films, novel deposition technologies for CuGaSe2 films and buffer layers as well as alternative buffer layers were studied and compared. With ZnSe as alternative buffer layer on Cu(InGa)(S,Se)2 absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13.7% and active area efficiencies up to 15.7% could be reached, respectively. For CuInS2 two important results were achieved. The efficiency of Cu-poor CuInS2 cells could be increased to 8.3%. Standard Cu-rich prepared devices led to a new record efficiency of 12.5%.

UR - http://www.scopus.com/inward/record.url?scp=0033907509&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033907509&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00826-3

DO - 10.1016/S0040-6090(99)00826-3

M3 - Article

VL - 361

SP - 533

EP - 539

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -