Pressure effect on the growth of oxide layers on germanium substrates

J. Al-Sadah, Nouar Tabet, M. Salim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

X-ray Photoelectron Spectroscopy (XPS) was used to investigate the growth of thin oxide layers obtained by dry oxidation on (011) germanium substrates. The heat treatments were carried out, in-situ, at T = 380 °C under various values of air pressure. The quantitative analysis of the XPS spectra suggests the growth of non uniform oxide layers. An apparent thickness of the oxide film was defined as function of the fraction of the oxidized surface and of the actual thickness of the oxide islands. The results show a quasi linear dependence of the apparent thickness versus the air pressure.

Original languageEnglish
Pages (from-to)409-414
Number of pages6
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume114-116
DOIs
Publication statusPublished - 1 Mar 2001
Externally publishedYes

Fingerprint

Germanium
Pressure effects
pressure effects
Oxides
germanium
oxides
Substrates
X ray photoelectron spectroscopy
photoelectron spectroscopy
air
Air
quantitative analysis
Oxide films
oxide films
heat treatment
x rays
Heat treatment
Oxidation
oxidation
Chemical analysis

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Pressure effect on the growth of oxide layers on germanium substrates. / Al-Sadah, J.; Tabet, Nouar; Salim, M.

In: Journal of Electron Spectroscopy and Related Phenomena, Vol. 114-116, 01.03.2001, p. 409-414.

Research output: Contribution to journalArticle

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