Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes

Tobias Gerfin, Michael Becht, Klaus Hermann Dahmen

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Two β-ketoiminato complexes of copper (II), namely bis-(acetylacetone)ethylenediiminato-copper(II) (1) and [4-[N′-dimethylethylamino)-N-iminato]-pentan-2-one](acetano)copper (II) (2) were investigated as precursors for the growth of metallic copper films by metal-organic chemical vapour deposition (MOCVD). Evaporation experiments showed a rather low volatility compared with β-diketonato compounds as Cu(acac), Cu(dpm)2 and Cu(tfa)2 and Cu(hfa)2. The more volatile complex 1 was used in MOCVD experiments in a horizontal quartz reactor using a graphite susceptor covered with copper or copper oxide. Thin films (thickness, 0.1-0.7 μm) were grown on quartz, sappire, Si[100], MgO[100] and Al. The kinetic dependence of the growth rate on partial pressure of 1 and the reaction gas hydrogen is discussed. Single-phase films or mixtures of metallic copper and copper oxide could be identified by X-ray diffraction. Scanning Auger microscopy yielded a rather high level (about 6 at.%) of carbon and no nitrogen (1 at.% or less) in the films.

Original languageEnglish
Pages (from-to)97-100
Number of pages4
JournalMaterials Science and Engineering B
Volume17
Issue number1-3
Publication statusPublished - 28 Feb 1993
Externally publishedYes

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Organic Chemicals
Copper oxides
Organic chemicals
copper oxides
Oxide films
metalorganic chemical vapor deposition
oxide films
Copper
Chemical vapor deposition
Metals
copper
preparation
Quartz
Graphite
quartz
Partial pressure
Film thickness
Hydrogen
acetylacetone
Microscopic examination

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes. / Gerfin, Tobias; Becht, Michael; Dahmen, Klaus Hermann.

In: Materials Science and Engineering B, Vol. 17, No. 1-3, 28.02.1993, p. 97-100.

Research output: Contribution to journalArticle

Gerfin, Tobias ; Becht, Michael ; Dahmen, Klaus Hermann. / Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes. In: Materials Science and Engineering B. 1993 ; Vol. 17, No. 1-3. pp. 97-100.
@article{3b5ce347f5094637951402f1de96a9df,
title = "Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes",
abstract = "Two β-ketoiminato complexes of copper (II), namely bis-(acetylacetone)ethylenediiminato-copper(II) (1) and [4-[N′-dimethylethylamino)-N-iminato]-pentan-2-one](acetano)copper (II) (2) were investigated as precursors for the growth of metallic copper films by metal-organic chemical vapour deposition (MOCVD). Evaporation experiments showed a rather low volatility compared with β-diketonato compounds as Cu(acac), Cu(dpm)2 and Cu(tfa)2 and Cu(hfa)2. The more volatile complex 1 was used in MOCVD experiments in a horizontal quartz reactor using a graphite susceptor covered with copper or copper oxide. Thin films (thickness, 0.1-0.7 μm) were grown on quartz, sappire, Si[100], MgO[100] and Al. The kinetic dependence of the growth rate on partial pressure of 1 and the reaction gas hydrogen is discussed. Single-phase films or mixtures of metallic copper and copper oxide could be identified by X-ray diffraction. Scanning Auger microscopy yielded a rather high level (about 6 at.{\%}) of carbon and no nitrogen (1 at.{\%} or less) in the films.",
author = "Tobias Gerfin and Michael Becht and Dahmen, {Klaus Hermann}",
year = "1993",
month = "2",
day = "28",
language = "English",
volume = "17",
pages = "97--100",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Preparation of copper and copper oxide films by metal-organic chemical vapour deposition using β-ketoiminato complexes

AU - Gerfin, Tobias

AU - Becht, Michael

AU - Dahmen, Klaus Hermann

PY - 1993/2/28

Y1 - 1993/2/28

N2 - Two β-ketoiminato complexes of copper (II), namely bis-(acetylacetone)ethylenediiminato-copper(II) (1) and [4-[N′-dimethylethylamino)-N-iminato]-pentan-2-one](acetano)copper (II) (2) were investigated as precursors for the growth of metallic copper films by metal-organic chemical vapour deposition (MOCVD). Evaporation experiments showed a rather low volatility compared with β-diketonato compounds as Cu(acac), Cu(dpm)2 and Cu(tfa)2 and Cu(hfa)2. The more volatile complex 1 was used in MOCVD experiments in a horizontal quartz reactor using a graphite susceptor covered with copper or copper oxide. Thin films (thickness, 0.1-0.7 μm) were grown on quartz, sappire, Si[100], MgO[100] and Al. The kinetic dependence of the growth rate on partial pressure of 1 and the reaction gas hydrogen is discussed. Single-phase films or mixtures of metallic copper and copper oxide could be identified by X-ray diffraction. Scanning Auger microscopy yielded a rather high level (about 6 at.%) of carbon and no nitrogen (1 at.% or less) in the films.

AB - Two β-ketoiminato complexes of copper (II), namely bis-(acetylacetone)ethylenediiminato-copper(II) (1) and [4-[N′-dimethylethylamino)-N-iminato]-pentan-2-one](acetano)copper (II) (2) were investigated as precursors for the growth of metallic copper films by metal-organic chemical vapour deposition (MOCVD). Evaporation experiments showed a rather low volatility compared with β-diketonato compounds as Cu(acac), Cu(dpm)2 and Cu(tfa)2 and Cu(hfa)2. The more volatile complex 1 was used in MOCVD experiments in a horizontal quartz reactor using a graphite susceptor covered with copper or copper oxide. Thin films (thickness, 0.1-0.7 μm) were grown on quartz, sappire, Si[100], MgO[100] and Al. The kinetic dependence of the growth rate on partial pressure of 1 and the reaction gas hydrogen is discussed. Single-phase films or mixtures of metallic copper and copper oxide could be identified by X-ray diffraction. Scanning Auger microscopy yielded a rather high level (about 6 at.%) of carbon and no nitrogen (1 at.% or less) in the films.

UR - http://www.scopus.com/inward/record.url?scp=0027540263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027540263&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 97

EP - 100

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -