Preparation and properties of YBa2Cu3O7-x thin films on LaAlO3 by pulsed excimer laser ablation

M. E. Geusic, W. J. Weber, L. R. Pederson

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    Abstract

    Epitaxial YBa2Cu3O7-x thin films were grown on (100)-LaAlO3 substrates by pulsed excimer laser ablation (308 nm) using a rotating YBa2Cu3O7-x target. Principally c-axis oriented, the films exhibited a midpoint Tc of 88.5 K with a 3 K transition width (10-90%). Transport critical current densities, measured in zero applied field on 100 μn wide microbridges, were 1.25× 106 A/cm2 at 77 K and reached 4.7× 106 A/cm2 at 10 K. Critical current densities at temperatures near Tc (77 to 88 K) were proportional to (1 - T Tc)n, with n≈ 1.5, in reasonable agreement with the expected Ginzburg-Landau dependence for thin films near Tc. The value n≈1.5 implies that a superconductor-normal-metal-insulator-superconductor (S-N-I-S) tunneling junction is formed at the grain boundaries in these films.

    Original languageEnglish
    Pages (from-to)13-16
    Number of pages4
    JournalMaterials Letters
    Volume10
    Issue number1-2
    DOIs
    Publication statusPublished - Sep 1990

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    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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