Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures

J. J. Wang, K. B. Jung, J. R. Childress, S. J. Pearton, F. Sharifi, K. H. Dahmen, E. S. Gillman, F. J. Cadieu, R. Rani, X. R. Qian, Li Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A number of different plasma chemistries have been employed for patterning of La 0.41Ca 0.59MnO 3 and SmCo thin films for application in magnetic field-biased structures based on the colossal magneto-resistive effect. For La 0.41Ca 0.59MnO 3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl 2, SF 6 and CH 4/H 2 plasmas under high ion density conditions except BI 3 and BBr 3 plasmas. This is expected based on the vapor pressures of the prospective etch products. For SmCo however, etch rates up to 7,000 angstrom/min were obtained in Cl 2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anisotropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.S. Schwartz, D.S. Shih, A.G. Evans, H.N.G. Wadley
PublisherMRS
Pages141-146
Number of pages6
Volume517
Publication statusPublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199815 Apr 1998

Other

OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA
Period13/4/9815/4/98

Fingerprint

Etching
Plasmas
Sputtering
Chucks
Plasma sources
Vapor pressure
Surface morphology
Ions
Magnetic fields
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Wang, J. J., Jung, K. B., Childress, J. R., Pearton, S. J., Sharifi, F., Dahmen, K. H., ... Chen, L. (1998). Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures In D. S. Schwartz, D. S. Shih, A. G. Evans, & H. N. G. Wadley (Eds.), Materials Research Society Symposium - Proceedings (Vol. 517, pp. 141-146). MRS.

Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures . / Wang, J. J.; Jung, K. B.; Childress, J. R.; Pearton, S. J.; Sharifi, F.; Dahmen, K. H.; Gillman, E. S.; Cadieu, F. J.; Rani, R.; Qian, X. R.; Chen, Li.

Materials Research Society Symposium - Proceedings. ed. / D.S. Schwartz; D.S. Shih; A.G. Evans; H.N.G. Wadley. Vol. 517 MRS, 1998. p. 141-146.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, JJ, Jung, KB, Childress, JR, Pearton, SJ, Sharifi, F, Dahmen, KH, Gillman, ES, Cadieu, FJ, Rani, R, Qian, XR & Chen, L 1998, Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures in DS Schwartz, DS Shih, AG Evans & HNG Wadley (eds), Materials Research Society Symposium - Proceedings. vol. 517, MRS, pp. 141-146, Proceedings of the 1998 MRS Spring Symposium, San Francisco, CA, USA, 13/4/98.
Wang JJ, Jung KB, Childress JR, Pearton SJ, Sharifi F, Dahmen KH et al. Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures In Schwartz DS, Shih DS, Evans AG, Wadley HNG, editors, Materials Research Society Symposium - Proceedings. Vol. 517. MRS. 1998. p. 141-146
Wang, J. J. ; Jung, K. B. ; Childress, J. R. ; Pearton, S. J. ; Sharifi, F. ; Dahmen, K. H. ; Gillman, E. S. ; Cadieu, F. J. ; Rani, R. ; Qian, X. R. ; Chen, Li. / Plasma chemistries for etching of La 0.41Ca 0.59MnO 3 and SmCo CMR structures Materials Research Society Symposium - Proceedings. editor / D.S. Schwartz ; D.S. Shih ; A.G. Evans ; H.N.G. Wadley. Vol. 517 MRS, 1998. pp. 141-146
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AB - A number of different plasma chemistries have been employed for patterning of La 0.41Ca 0.59MnO 3 and SmCo thin films for application in magnetic field-biased structures based on the colossal magneto-resistive effect. For La 0.41Ca 0.59MnO 3 there was no chemical enhancement in etch rate over simple Ar sputtering for Cl 2, SF 6 and CH 4/H 2 plasmas under high ion density conditions except BI 3 and BBr 3 plasmas. This is expected based on the vapor pressures of the prospective etch products. For SmCo however, etch rates up to 7,000 angstrom/min were obtained in Cl 2/Ar plasmas, which is an order of magnitude faster than Ar sputtering under the same experimental conditions. Smooth etched surface morphologies and anisotropic sidewalls were obtained for both materials over a wide range of plasma source and chuck powers.

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