Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers

Marie Buffiere, H. Elanzeery, S. Oueslati, K. Ben Messaoud, G. Brammertz, M. Meuris, J. Poortmans

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Cu2ZnGeSe4(CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV.

Original languageEnglish
Pages (from-to)171-175
Number of pages5
JournalThin Solid Films
Volume582
DOIs
Publication statusPublished - 1 May 2015
Externally publishedYes

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Keywords

  • CuZnGeSe
  • Thin film solar cells
  • Wide band gap

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Buffiere, M., Elanzeery, H., Oueslati, S., Ben Messaoud, K., Brammertz, G., Meuris, M., & Poortmans, J. (2015). Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers. Thin Solid Films, 582, 171-175. https://doi.org/10.1016/j.tsf.2014.09.024