Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers

Marie Buffiere, H. Elanzeery, S. Oueslati, K. Ben Messaoud, G. Brammertz, M. Meuris, J. Poortmans

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Cu2ZnGeSe4(CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV.

Original languageEnglish
Pages (from-to)171-175
Number of pages5
JournalThin Solid Films
Volume582
DOIs
Publication statusPublished - 1 May 2015
Externally publishedYes

Fingerprint

Annealing
annealing
Thin film devices
Thin films
thin films
Optical band gaps
Chemical analysis
Lime
Energy gap
calcium oxides
Tuning
Physical properties
Gases
Glass
absorbers
Temperature
physical properties
tuning
Substrates
broadband

Keywords

  • CuZnGeSe
  • Thin film solar cells
  • Wide band gap

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Buffiere, M., Elanzeery, H., Oueslati, S., Ben Messaoud, K., Brammertz, G., Meuris, M., & Poortmans, J. (2015). Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers. Thin Solid Films, 582, 171-175. https://doi.org/10.1016/j.tsf.2014.09.024

Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers. / Buffiere, Marie; Elanzeery, H.; Oueslati, S.; Ben Messaoud, K.; Brammertz, G.; Meuris, M.; Poortmans, J.

In: Thin Solid Films, Vol. 582, 01.05.2015, p. 171-175.

Research output: Contribution to journalArticle

Buffiere, M, Elanzeery, H, Oueslati, S, Ben Messaoud, K, Brammertz, G, Meuris, M & Poortmans, J 2015, 'Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers', Thin Solid Films, vol. 582, pp. 171-175. https://doi.org/10.1016/j.tsf.2014.09.024
Buffiere, Marie ; Elanzeery, H. ; Oueslati, S. ; Ben Messaoud, K. ; Brammertz, G. ; Meuris, M. ; Poortmans, J. / Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers. In: Thin Solid Films. 2015 ; Vol. 582. pp. 171-175.
@article{db2d5158a1ba43cc994335dad51bf400,
title = "Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers",
abstract = "Cu2ZnGeSe4(CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV.",
keywords = "CuZnGeSe, Thin film solar cells, Wide band gap",
author = "Marie Buffiere and H. Elanzeery and S. Oueslati and {Ben Messaoud}, K. and G. Brammertz and M. Meuris and J. Poortmans",
year = "2015",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2014.09.024",
language = "English",
volume = "582",
pages = "171--175",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Physical characterization of Cu2ZnGeSe4thin films from annealing of Cu-Zn-Ge precursor layers

AU - Buffiere, Marie

AU - Elanzeery, H.

AU - Oueslati, S.

AU - Ben Messaoud, K.

AU - Brammertz, G.

AU - Meuris, M.

AU - Poortmans, J.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Cu2ZnGeSe4(CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV.

AB - Cu2ZnGeSe4(CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H2Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV.

KW - CuZnGeSe

KW - Thin film solar cells

KW - Wide band gap

UR - http://www.scopus.com/inward/record.url?scp=84926520398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84926520398&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.09.024

DO - 10.1016/j.tsf.2014.09.024

M3 - Article

VL - 582

SP - 171

EP - 175

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -