Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells

S. Oueslati, G. Brammertz, Marie Buffiere, H. Elanzeery, O. Touayar, C. Köble, J. Bekaert, M. Meuris, J. Poortmans

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

We report on the electrical, optical and physical properties of Cu2ZnSnSe4solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm2, an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact.

Original languageEnglish
Pages (from-to)224-228
Number of pages5
JournalThin Solid Films
Volume582
DOIs
Publication statusPublished - 1 May 2015
Externally publishedYes

Fingerprint

Open circuit voltage
open circuit voltage
absorbers
solar cells
Photoluminescence spectroscopy
short circuit currents
thin films
electrical impedance
Quantum efficiency
Temperature measurement
Short circuit currents
low voltage
Conversion efficiency
temperature measurement
quantum efficiency
Electric properties
Current density
Optical properties
Physical properties
physical properties

Keywords

  • CuZnSnSe
  • Deep defects
  • Solar cell characterization
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Oueslati, S., Brammertz, G., Buffiere, M., Elanzeery, H., Touayar, O., Köble, C., ... Poortmans, J. (2015). Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells. Thin Solid Films, 582, 224-228. https://doi.org/10.1016/j.tsf.2014.10.052

Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells. / Oueslati, S.; Brammertz, G.; Buffiere, Marie; Elanzeery, H.; Touayar, O.; Köble, C.; Bekaert, J.; Meuris, M.; Poortmans, J.

In: Thin Solid Films, Vol. 582, 01.05.2015, p. 224-228.

Research output: Contribution to journalArticle

Oueslati, S, Brammertz, G, Buffiere, M, Elanzeery, H, Touayar, O, Köble, C, Bekaert, J, Meuris, M & Poortmans, J 2015, 'Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells', Thin Solid Films, vol. 582, pp. 224-228. https://doi.org/10.1016/j.tsf.2014.10.052
Oueslati, S. ; Brammertz, G. ; Buffiere, Marie ; Elanzeery, H. ; Touayar, O. ; Köble, C. ; Bekaert, J. ; Meuris, M. ; Poortmans, J. / Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells. In: Thin Solid Films. 2015 ; Vol. 582. pp. 224-228.
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