Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells

S. Oueslati, G. Brammertz, Marie Buffiere, H. Elanzeery, O. Touayar, C. Köble, J. Bekaert, M. Meuris, J. Poortmans

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Abstract

We report on the electrical, optical and physical properties of Cu2ZnSnSe4solar cells using an absorber layer fabricated by selenization of sputtered Cu, Zn and Cu10Sn90multilayers. A maximum active-area conversion efficiency of 10.4% under AM1.5G was measured with a maximum short circuit current density of 39.7 mA/cm2, an open circuit voltage of 394 mV and a fill factor of 66.4%. We perform electrical and optical characterization using photoluminescence spectroscopy, external quantum efficiency, current-voltage and admittance versus temperature measurements in order to derive information about possible causes for the low open circuit voltage values observed. The main defects derived from these measurements are strong potential fluctuations in the absorber layer as well as a potential barrier of the order of 133 meV at the back side contact.

Original languageEnglish
Pages (from-to)224-228
Number of pages5
JournalThin Solid Films
Volume582
DOIs
Publication statusPublished - 1 May 2015
Externally publishedYes

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Keywords

  • CuZnSnSe
  • Deep defects
  • Solar cell characterization
  • Thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Oueslati, S., Brammertz, G., Buffiere, M., Elanzeery, H., Touayar, O., Köble, C., Bekaert, J., Meuris, M., & Poortmans, J. (2015). Physical and electrical characterization of high-performance Cu2ZnSnSe4based thin film solar cells. Thin Solid Films, 582, 224-228. https://doi.org/10.1016/j.tsf.2014.10.052