Photoelectron-diffraction and photoelectron-holography study of a Ge(111) high-temperature surface phase transition

T. T. Tran, S. Thevuthasan, Y. J. Kim, G. S. Herman, D. J. Friedman, C. S. Fadley

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    Abstract

    Further evidence for a reversible surface-disordering phase transition on Ge(111) occurring 150 K below the bulk melting point of 1210 K has been found using Ge 3p x-ray photoelectron diffraction (XPD). Azimuthal XPD data at takeoff angles of =19°(including nearest-neighbor forward-scattering directions and yielding high surface sensitivity) and =55°(for which second-nearest- neighbor scattering directions and more bulk sensitivity are involved) show abrupt decreases in intensity of 40% and 30%, respectively, over the interval of 900-1200 K. Photoelectron holograms and holographic images of near-neighbor atoms at temperatures above and below the phase transition indicate an identical near-neighbor structure for all atoms present in ordered sites. These combined diffraction and holography data indicate that by 1200 K the top 1-2 double layers of Ge atoms are completely disordered.

    Original languageEnglish
    Pages (from-to)12106-12109
    Number of pages4
    JournalPhysical Review B
    Volume45
    Issue number20
    DOIs
    Publication statusPublished - 1 Jan 1992

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    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Tran, T. T., Thevuthasan, S., Kim, Y. J., Herman, G. S., Friedman, D. J., & Fadley, C. S. (1992). Photoelectron-diffraction and photoelectron-holography study of a Ge(111) high-temperature surface phase transition. Physical Review B, 45(20), 12106-12109. https://doi.org/10.1103/PhysRevB.45.12106