Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride

Sung Kyu Choi, Weon Sik Chae, Bokyung Song, Chang Hee Cho, Jina Choi, Dong Suk Han, Wonyong Choi, Hyunwoong Park

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

p-Si wire arrays overlaid with an ultrathin titanium nitride (TiN) film are developed and demonstrated to be an efficient and robust photocathode for hydrogen production. Arrays of vertically aligned 20 μm long p-Si microwires of varying diameters (1.6-14.6 μm) are fabricated via a photolithographic technique, and then the wires are coated with a TiN nanolayer 2-20 nm thick by low-temperature plasma-enhanced atomic layer deposition. The optimized heterojunction consisting of 1.6 μm-thick wires covered by 10 nm thick TiN exhibits significantly improved performance for hydrogen evolution reaction under simulated sunlight (AM 1.5G, 100 mW cm-2). It displays a photocurrent onset potential of ∼+0.4 V vs. reversible hydrogen electrode (RHE), and a faradaic efficiency of nearly 100% at 0 V vs. RHE over 20 h of reaction. Time-resolved photoluminescence decay reveals that the lifetime (τ) of the photogenerated charge carriers in the optimized wire/TiN heterojunction is ∼60% shorter than those using thicker wires, suggesting significantly faster charge transfer. Such remarkable performance is attributed to enhanced transfer of the minority carriers in the radial direction of the wires. TiN performs the triple roles of antireflection, protection of the Si surface, and electrocatalysis of hydrogen production. Finite-difference time-domain simulation reveals a significant increase in the absorptance of wire arrays with TiN film, and that long wavelength photons are more effectively absorbed by the wire/TiN arrays.

Original languageEnglish
Pages (from-to)14008-14016
Number of pages9
JournalJournal of Materials Chemistry A
Volume4
Issue number36
DOIs
Publication statusPublished - 2016

Fingerprint

Titanium nitride
Silicon
Hydrogen production
Wire
Hydrogen
Heterojunctions
Electrocatalysis
Electrodes
Photocathodes
titanium nitride
Atomic layer deposition
Charge carriers
Photocurrents
Charge transfer
Photoluminescence
Photons
Plasmas
Wavelength

ASJC Scopus subject areas

  • Chemistry(all)
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)

Cite this

Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride. / Choi, Sung Kyu; Chae, Weon Sik; Song, Bokyung; Cho, Chang Hee; Choi, Jina; Han, Dong Suk; Choi, Wonyong; Park, Hyunwoong.

In: Journal of Materials Chemistry A, Vol. 4, No. 36, 2016, p. 14008-14016.

Research output: Contribution to journalArticle

Choi, Sung Kyu ; Chae, Weon Sik ; Song, Bokyung ; Cho, Chang Hee ; Choi, Jina ; Han, Dong Suk ; Choi, Wonyong ; Park, Hyunwoong. / Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride. In: Journal of Materials Chemistry A. 2016 ; Vol. 4, No. 36. pp. 14008-14016.
@article{1a1792d7dd6a452abe66c89087c4ee57,
title = "Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride",
abstract = "p-Si wire arrays overlaid with an ultrathin titanium nitride (TiN) film are developed and demonstrated to be an efficient and robust photocathode for hydrogen production. Arrays of vertically aligned 20 μm long p-Si microwires of varying diameters (1.6-14.6 μm) are fabricated via a photolithographic technique, and then the wires are coated with a TiN nanolayer 2-20 nm thick by low-temperature plasma-enhanced atomic layer deposition. The optimized heterojunction consisting of 1.6 μm-thick wires covered by 10 nm thick TiN exhibits significantly improved performance for hydrogen evolution reaction under simulated sunlight (AM 1.5G, 100 mW cm-2). It displays a photocurrent onset potential of ∼+0.4 V vs. reversible hydrogen electrode (RHE), and a faradaic efficiency of nearly 100{\%} at 0 V vs. RHE over 20 h of reaction. Time-resolved photoluminescence decay reveals that the lifetime (τ) of the photogenerated charge carriers in the optimized wire/TiN heterojunction is ∼60{\%} shorter than those using thicker wires, suggesting significantly faster charge transfer. Such remarkable performance is attributed to enhanced transfer of the minority carriers in the radial direction of the wires. TiN performs the triple roles of antireflection, protection of the Si surface, and electrocatalysis of hydrogen production. Finite-difference time-domain simulation reveals a significant increase in the absorptance of wire arrays with TiN film, and that long wavelength photons are more effectively absorbed by the wire/TiN arrays.",
author = "Choi, {Sung Kyu} and Chae, {Weon Sik} and Bokyung Song and Cho, {Chang Hee} and Jina Choi and Han, {Dong Suk} and Wonyong Choi and Hyunwoong Park",
year = "2016",
doi = "10.1039/c6ta05200b",
language = "English",
volume = "4",
pages = "14008--14016",
journal = "Journal of Materials Chemistry A",
issn = "2050-7488",
publisher = "Royal Society of Chemistry",
number = "36",

}

TY - JOUR

T1 - Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride

AU - Choi, Sung Kyu

AU - Chae, Weon Sik

AU - Song, Bokyung

AU - Cho, Chang Hee

AU - Choi, Jina

AU - Han, Dong Suk

AU - Choi, Wonyong

AU - Park, Hyunwoong

PY - 2016

Y1 - 2016

N2 - p-Si wire arrays overlaid with an ultrathin titanium nitride (TiN) film are developed and demonstrated to be an efficient and robust photocathode for hydrogen production. Arrays of vertically aligned 20 μm long p-Si microwires of varying diameters (1.6-14.6 μm) are fabricated via a photolithographic technique, and then the wires are coated with a TiN nanolayer 2-20 nm thick by low-temperature plasma-enhanced atomic layer deposition. The optimized heterojunction consisting of 1.6 μm-thick wires covered by 10 nm thick TiN exhibits significantly improved performance for hydrogen evolution reaction under simulated sunlight (AM 1.5G, 100 mW cm-2). It displays a photocurrent onset potential of ∼+0.4 V vs. reversible hydrogen electrode (RHE), and a faradaic efficiency of nearly 100% at 0 V vs. RHE over 20 h of reaction. Time-resolved photoluminescence decay reveals that the lifetime (τ) of the photogenerated charge carriers in the optimized wire/TiN heterojunction is ∼60% shorter than those using thicker wires, suggesting significantly faster charge transfer. Such remarkable performance is attributed to enhanced transfer of the minority carriers in the radial direction of the wires. TiN performs the triple roles of antireflection, protection of the Si surface, and electrocatalysis of hydrogen production. Finite-difference time-domain simulation reveals a significant increase in the absorptance of wire arrays with TiN film, and that long wavelength photons are more effectively absorbed by the wire/TiN arrays.

AB - p-Si wire arrays overlaid with an ultrathin titanium nitride (TiN) film are developed and demonstrated to be an efficient and robust photocathode for hydrogen production. Arrays of vertically aligned 20 μm long p-Si microwires of varying diameters (1.6-14.6 μm) are fabricated via a photolithographic technique, and then the wires are coated with a TiN nanolayer 2-20 nm thick by low-temperature plasma-enhanced atomic layer deposition. The optimized heterojunction consisting of 1.6 μm-thick wires covered by 10 nm thick TiN exhibits significantly improved performance for hydrogen evolution reaction under simulated sunlight (AM 1.5G, 100 mW cm-2). It displays a photocurrent onset potential of ∼+0.4 V vs. reversible hydrogen electrode (RHE), and a faradaic efficiency of nearly 100% at 0 V vs. RHE over 20 h of reaction. Time-resolved photoluminescence decay reveals that the lifetime (τ) of the photogenerated charge carriers in the optimized wire/TiN heterojunction is ∼60% shorter than those using thicker wires, suggesting significantly faster charge transfer. Such remarkable performance is attributed to enhanced transfer of the minority carriers in the radial direction of the wires. TiN performs the triple roles of antireflection, protection of the Si surface, and electrocatalysis of hydrogen production. Finite-difference time-domain simulation reveals a significant increase in the absorptance of wire arrays with TiN film, and that long wavelength photons are more effectively absorbed by the wire/TiN arrays.

UR - http://www.scopus.com/inward/record.url?scp=84987755485&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987755485&partnerID=8YFLogxK

U2 - 10.1039/c6ta05200b

DO - 10.1039/c6ta05200b

M3 - Article

VL - 4

SP - 14008

EP - 14016

JO - Journal of Materials Chemistry A

JF - Journal of Materials Chemistry A

SN - 2050-7488

IS - 36

ER -