Photoelectrochemical characterization of semitransparent WO3 films

N. S. Gaikwad, G. Waldner, A. Brüger, Abdelhak Belaidi, S. M. Chaqour, M. Neumann-Spallart

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Tungsten trioxide films on transparent substrates (glass and F:SnO 2 or indium-tin oxide coated glass) were prepared by various methods like doctor-blading, dip-coating, layer-by-layer painting, and spin-coating. Films of up to 10 × 10 cm were grown and characterized by X-ray diffraction, scanning electron microscopy, optical reflectance and transmittance, and photoelectrochemical measurements. Well-crystallized WO 3 with monoclinic structure prevails on all substrates after annealing at or above 550°C. Films grown via layer-by-layer painting and spin-coating using organic precursors consist of WO3 particulates of around 50 nm. Such films are specular and highly transparent outside the bandgap. Their photoactivity extends up to 470 nm and junctions with 0.1 M HClO4 yield incident photon to current conversion efficiencies values above 0.9 at 313 nm and 0.1 at 436 nm. Under solar illumination, photocurrents of up to 0.91 mA/cm2 (front-side illumination) and 0.67 mA/cm 2 (back-side illumination) were drawn.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume152
Issue number5
DOIs
Publication statusPublished - 2005
Externally publishedYes

Fingerprint

coating
Lighting
illumination
Spin coating
Painting
Glass
glass
Substrates
Tin oxides
Photocurrents
indium oxides
Indium
particulates
tin oxides
Conversion efficiency
photocurrents
Tungsten
transmittance
tungsten
Energy gap

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Gaikwad, N. S., Waldner, G., Brüger, A., Belaidi, A., Chaqour, S. M., & Neumann-Spallart, M. (2005). Photoelectrochemical characterization of semitransparent WO3 films. Journal of the Electrochemical Society, 152(5). https://doi.org/10.1149/1.1890705

Photoelectrochemical characterization of semitransparent WO3 films. / Gaikwad, N. S.; Waldner, G.; Brüger, A.; Belaidi, Abdelhak; Chaqour, S. M.; Neumann-Spallart, M.

In: Journal of the Electrochemical Society, Vol. 152, No. 5, 2005.

Research output: Contribution to journalArticle

Gaikwad, NS, Waldner, G, Brüger, A, Belaidi, A, Chaqour, SM & Neumann-Spallart, M 2005, 'Photoelectrochemical characterization of semitransparent WO3 films', Journal of the Electrochemical Society, vol. 152, no. 5. https://doi.org/10.1149/1.1890705
Gaikwad, N. S. ; Waldner, G. ; Brüger, A. ; Belaidi, Abdelhak ; Chaqour, S. M. ; Neumann-Spallart, M. / Photoelectrochemical characterization of semitransparent WO3 films. In: Journal of the Electrochemical Society. 2005 ; Vol. 152, No. 5.
@article{2cf733d921f74821a96b5b6b7d8316ff,
title = "Photoelectrochemical characterization of semitransparent WO3 films",
abstract = "Tungsten trioxide films on transparent substrates (glass and F:SnO 2 or indium-tin oxide coated glass) were prepared by various methods like doctor-blading, dip-coating, layer-by-layer painting, and spin-coating. Films of up to 10 × 10 cm were grown and characterized by X-ray diffraction, scanning electron microscopy, optical reflectance and transmittance, and photoelectrochemical measurements. Well-crystallized WO 3 with monoclinic structure prevails on all substrates after annealing at or above 550°C. Films grown via layer-by-layer painting and spin-coating using organic precursors consist of WO3 particulates of around 50 nm. Such films are specular and highly transparent outside the bandgap. Their photoactivity extends up to 470 nm and junctions with 0.1 M HClO4 yield incident photon to current conversion efficiencies values above 0.9 at 313 nm and 0.1 at 436 nm. Under solar illumination, photocurrents of up to 0.91 mA/cm2 (front-side illumination) and 0.67 mA/cm 2 (back-side illumination) were drawn.",
author = "Gaikwad, {N. S.} and G. Waldner and A. Br{\"u}ger and Abdelhak Belaidi and Chaqour, {S. M.} and M. Neumann-Spallart",
year = "2005",
doi = "10.1149/1.1890705",
language = "English",
volume = "152",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

TY - JOUR

T1 - Photoelectrochemical characterization of semitransparent WO3 films

AU - Gaikwad, N. S.

AU - Waldner, G.

AU - Brüger, A.

AU - Belaidi, Abdelhak

AU - Chaqour, S. M.

AU - Neumann-Spallart, M.

PY - 2005

Y1 - 2005

N2 - Tungsten trioxide films on transparent substrates (glass and F:SnO 2 or indium-tin oxide coated glass) were prepared by various methods like doctor-blading, dip-coating, layer-by-layer painting, and spin-coating. Films of up to 10 × 10 cm were grown and characterized by X-ray diffraction, scanning electron microscopy, optical reflectance and transmittance, and photoelectrochemical measurements. Well-crystallized WO 3 with monoclinic structure prevails on all substrates after annealing at or above 550°C. Films grown via layer-by-layer painting and spin-coating using organic precursors consist of WO3 particulates of around 50 nm. Such films are specular and highly transparent outside the bandgap. Their photoactivity extends up to 470 nm and junctions with 0.1 M HClO4 yield incident photon to current conversion efficiencies values above 0.9 at 313 nm and 0.1 at 436 nm. Under solar illumination, photocurrents of up to 0.91 mA/cm2 (front-side illumination) and 0.67 mA/cm 2 (back-side illumination) were drawn.

AB - Tungsten trioxide films on transparent substrates (glass and F:SnO 2 or indium-tin oxide coated glass) were prepared by various methods like doctor-blading, dip-coating, layer-by-layer painting, and spin-coating. Films of up to 10 × 10 cm were grown and characterized by X-ray diffraction, scanning electron microscopy, optical reflectance and transmittance, and photoelectrochemical measurements. Well-crystallized WO 3 with monoclinic structure prevails on all substrates after annealing at or above 550°C. Films grown via layer-by-layer painting and spin-coating using organic precursors consist of WO3 particulates of around 50 nm. Such films are specular and highly transparent outside the bandgap. Their photoactivity extends up to 470 nm and junctions with 0.1 M HClO4 yield incident photon to current conversion efficiencies values above 0.9 at 313 nm and 0.1 at 436 nm. Under solar illumination, photocurrents of up to 0.91 mA/cm2 (front-side illumination) and 0.67 mA/cm 2 (back-side illumination) were drawn.

UR - http://www.scopus.com/inward/record.url?scp=20344389761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20344389761&partnerID=8YFLogxK

U2 - 10.1149/1.1890705

DO - 10.1149/1.1890705

M3 - Article

VL - 152

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -