Photo induced effects in Bi/As2Se3 bilayer thin films

Ramakanta Naik, E. M. Vinod, C. Kumar, R. Ganesan, K. S. Sangunni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bilayer thin films of Bi/As2Se3 were prepared from Bi and As2Se3 by thermal evaporation technique under high vacuum. We have irradiated the films by using a laser of 532 nm wavelength to study photo diffusion of Bi into As2Se3. The diffusion of Bi into As2Se3 matrix increases the optical band gap producing photo bleaching effect. The changes were characterized by Fourier Transform Infrared and X-ray Photoelectron Spectroscopy (XPS) which shows the photo bleaching of the illuminated films. Optical constants were calculated by analyzing the transmission spectra. The core level peaks in XPS spectra give information about different bond formation.

Original languageEnglish
Title of host publicationSolid State Physics - Proceedings of the 57th DAE Solid State Physics Symposium 2012
Pages534-535
Number of pages2
DOIs
Publication statusPublished - 15 Mar 2013
Event57th DAE Solid State Physics Symposium 2012 - Bombay, Mumbai, India
Duration: 3 Dec 20127 Dec 2012

Publication series

NameAIP Conference Proceedings
Volume1512
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other57th DAE Solid State Physics Symposium 2012
CountryIndia
CityBombay, Mumbai
Period3/12/127/12/12

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Keywords

  • Amorphous materials
  • Optical properties
  • Thin films
  • XPS

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Naik, R., Vinod, E. M., Kumar, C., Ganesan, R., & Sangunni, K. S. (2013). Photo induced effects in Bi/As2Se3 bilayer thin films. In Solid State Physics - Proceedings of the 57th DAE Solid State Physics Symposium 2012 (pp. 534-535). (AIP Conference Proceedings; Vol. 1512). https://doi.org/10.1063/1.4791147