Photo induced changes in the optical properties of thermally evaporated As40Se50Sb10 films

Ramakanta Naik, Arpitha Jain, Vinod Madhavan, R. Ganesan, K. S. Sangunni

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The thermally evaporated amorphous As40Se50Sb10 thin film of 800 nm thickness was subjected to light exposure for photo induced studies. The changes were accompanied by structural effects, which in turn, lead to changes in the optical properties. The as-prepared and illuminated thin films were studied by Fourier Transform Infrared Spectroscopy, X-ray Photoelectron Spectroscopy and Raman Spectroscopy. The optical band gap was reduced due to photo induced effects along with the increase in disorder. These optical properties changes are due to the change of homopolar bond densities. The core level peak shifting in XPS spectra and Raman shift supports the optical changes happening in the film due to light exposure.

Original languageEnglish
Pages (from-to)2785-2788
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number9
DOIs
Publication statusPublished - Sep 2011
Externally publishedYes

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optical properties
thin films
Raman spectroscopy
infrared spectroscopy
photoelectron spectroscopy
disorders
shift
spectroscopy
x rays

Keywords

  • Chalcogenides
  • FTIR
  • Optical properties
  • Thin films
  • XPS

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Photo induced changes in the optical properties of thermally evaporated As40Se50Sb10 films. / Naik, Ramakanta; Jain, Arpitha; Madhavan, Vinod; Ganesan, R.; Sangunni, K. S.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 8, No. 9, 09.2011, p. 2785-2788.

Research output: Contribution to journalArticle

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