Perturbation approach of the injection effect on the electron-beam-induced current efficiency in lightly doped semiconductors

R. J. Tarento, D. E. Mekki, N. Tabet

Research output: Contribution to journalArticle

Abstract

The influence of the injection on the electron-beam-induced current (EBIC) collection efficiency η has been examined through a perturbation approach, assuming no recombination in the depletion zone but with a surface recombination speed which is independent from injection. This calculation investigates the hole (electron) concentration spatial distribution in the depletion zone as well as the consequences of the electric field variation in that zone, caused by the injection, on the EBIC efficiency of the lightly doped semiconductors. The results show that such an effect is far from weak. The EBIC experiments performed on Au-n-type Si Schottky diodes quantitatively agree with our model results. Finally, we come to the conclusion that the effect of the electron field variation on the collection efficiency is as important as the modification in the carrier recombination at higher levels.

Original languageEnglish
Pages (from-to)1347-1358
Number of pages12
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume80
Issue number7
DOIs
Publication statusPublished - 1 Jul 2000
Externally publishedYes

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Induced currents
Electron beams
electron beams
injection
Semiconductor materials
perturbation
depletion
Electrons
Schottky diodes
Spatial distribution
spatial distribution
Diodes
Electric fields
electric fields
electrons
Experiments

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Chemical Engineering(all)

Cite this

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abstract = "The influence of the injection on the electron-beam-induced current (EBIC) collection efficiency η has been examined through a perturbation approach, assuming no recombination in the depletion zone but with a surface recombination speed which is independent from injection. This calculation investigates the hole (electron) concentration spatial distribution in the depletion zone as well as the consequences of the electric field variation in that zone, caused by the injection, on the EBIC efficiency of the lightly doped semiconductors. The results show that such an effect is far from weak. The EBIC experiments performed on Au-n-type Si Schottky diodes quantitatively agree with our model results. Finally, we come to the conclusion that the effect of the electron field variation on the collection efficiency is as important as the modification in the carrier recombination at higher levels.",
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AU - Tarento, R. J.

AU - Mekki, D. E.

AU - Tabet, N.

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N2 - The influence of the injection on the electron-beam-induced current (EBIC) collection efficiency η has been examined through a perturbation approach, assuming no recombination in the depletion zone but with a surface recombination speed which is independent from injection. This calculation investigates the hole (electron) concentration spatial distribution in the depletion zone as well as the consequences of the electric field variation in that zone, caused by the injection, on the EBIC efficiency of the lightly doped semiconductors. The results show that such an effect is far from weak. The EBIC experiments performed on Au-n-type Si Schottky diodes quantitatively agree with our model results. Finally, we come to the conclusion that the effect of the electron field variation on the collection efficiency is as important as the modification in the carrier recombination at higher levels.

AB - The influence of the injection on the electron-beam-induced current (EBIC) collection efficiency η has been examined through a perturbation approach, assuming no recombination in the depletion zone but with a surface recombination speed which is independent from injection. This calculation investigates the hole (electron) concentration spatial distribution in the depletion zone as well as the consequences of the electric field variation in that zone, caused by the injection, on the EBIC efficiency of the lightly doped semiconductors. The results show that such an effect is far from weak. The EBIC experiments performed on Au-n-type Si Schottky diodes quantitatively agree with our model results. Finally, we come to the conclusion that the effect of the electron field variation on the collection efficiency is as important as the modification in the carrier recombination at higher levels.

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