Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

Original languageEnglish
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages48-55
Number of pages8
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: 14 Sep 200918 Sep 2009

Other

Other39th European Solid-State Device Research Conference, ESSDERC 2009
CountryGreece
CityAthens
Period14/9/0918/9/09

Fingerprint

microelectronics
Radiation effects
Microelectronics
physics
Physics
Aging of materials
engineering
performance
energy
simulation
event
Electron mobility
trend
Electron energy levels
Dosimetry
Energy gap
Doping (additives)
Hydrogen
Defects
Ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety Research

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S., Hadjisavvas, G., Batyrev, I. G., ... Schrimpf, R. D. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 48-55). [5331355] https://doi.org/10.1109/ESSDERC.2009.5331355

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J.; Rashkeev, Sergey; Hadjisavvas, G.; Batyrev, I. G.; Tuttle, B. R.; Marinopoulos, A. G.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 48-55 5331355.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, S, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2009, Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331355, pp. 48-55, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 14/9/09. https://doi.org/10.1109/ESSDERC.2009.5331355
Pantelides ST, Tsetseris L, Beck MJ, Rashkeev S, Hadjisavvas G, Batyrev IG et al. Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 48-55. 5331355 https://doi.org/10.1109/ESSDERC.2009.5331355
Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. ; Rashkeev, Sergey ; Hadjisavvas, G. ; Batyrev, I. G. ; Tuttle, B. R. ; Marinopoulos, A. G. ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. pp. 48-55
@inproceedings{84066eecdac14e268583e69d01fcda50,
title = "Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling",
abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",
author = "Pantelides, {Sokrates T.} and L. Tsetseris and Beck, {M. J.} and Sergey Rashkeev and G. Hadjisavvas and Batyrev, {I. G.} and Tuttle, {B. R.} and Marinopoulos, {A. G.} and Zhou, {X. J.} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",
year = "2009",
month = "12",
day = "1",
doi = "10.1109/ESSDERC.2009.5331355",
language = "English",
isbn = "9781424443536",
pages = "48--55",
booktitle = "ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference",

}

TY - GEN

T1 - Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

AU - Pantelides, Sokrates T.

AU - Tsetseris, L.

AU - Beck, M. J.

AU - Rashkeev, Sergey

AU - Hadjisavvas, G.

AU - Batyrev, I. G.

AU - Tuttle, B. R.

AU - Marinopoulos, A. G.

AU - Zhou, X. J.

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

AB - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

UR - http://www.scopus.com/inward/record.url?scp=72849130875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72849130875&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2009.5331355

DO - 10.1109/ESSDERC.2009.5331355

M3 - Conference contribution

AN - SCOPUS:72849130875

SN - 9781424443536

SP - 48

EP - 55

BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

ER -