Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

Original languageEnglish
Pages (from-to)841-848
Number of pages8
JournalSolid-State Electronics
Volume54
Issue number9
DOIs
Publication statusPublished - 1 Sep 2010
Externally publishedYes

Fingerprint

Radiation effects
radiation effects
microelectronics
Microelectronics
Physics
Aging of materials
engineering
physics
scale models
electron mobility
deactivation
energy levels
dosage
augmentation
Electron mobility
defects
hydrogen
radiation
Electron energy levels
Dosimetry

Keywords

  • Aging
  • Displacement damage
  • ELDRS
  • Hydrogen
  • Mobilities
  • MOSFET
  • NBTI
  • Radiation effects
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J.; Rashkeev, Sergey; Hadjisavvas, G.; Batyrev, I. G.; Tuttle, B. R.; Marinopoulos, A. G.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

In: Solid-State Electronics, Vol. 54, No. 9, 01.09.2010, p. 841-848.

Research output: Contribution to journalArticle

Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, S, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2010, 'Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling', Solid-State Electronics, vol. 54, no. 9, pp. 841-848. https://doi.org/10.1016/j.sse.2010.04.041
Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. ; Rashkeev, Sergey ; Hadjisavvas, G. ; Batyrev, I. G. ; Tuttle, B. R. ; Marinopoulos, A. G. ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In: Solid-State Electronics. 2010 ; Vol. 54, No. 9. pp. 841-848.
@article{0e1f566ff1c942758017ebc3c1a037f3,
title = "Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling",
abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",
keywords = "Aging, Displacement damage, ELDRS, Hydrogen, Mobilities, MOSFET, NBTI, Radiation effects, Reliability",
author = "Pantelides, {Sokrates T.} and L. Tsetseris and Beck, {M. J.} and Sergey Rashkeev and G. Hadjisavvas and Batyrev, {I. G.} and Tuttle, {B. R.} and Marinopoulos, {A. G.} and Zhou, {X. J.} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",
year = "2010",
month = "9",
day = "1",
doi = "10.1016/j.sse.2010.04.041",
language = "English",
volume = "54",
pages = "841--848",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

AU - Pantelides, Sokrates T.

AU - Tsetseris, L.

AU - Beck, M. J.

AU - Rashkeev, Sergey

AU - Hadjisavvas, G.

AU - Batyrev, I. G.

AU - Tuttle, B. R.

AU - Marinopoulos, A. G.

AU - Zhou, X. J.

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

AB - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

KW - Aging

KW - Displacement damage

KW - ELDRS

KW - Hydrogen

KW - Mobilities

KW - MOSFET

KW - NBTI

KW - Radiation effects

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=77954218607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954218607&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.04.041

DO - 10.1016/j.sse.2010.04.041

M3 - Article

VL - 54

SP - 841

EP - 848

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -