PbS/CdS heterojunction quantum dot solar cells

Sawsan Dagher, Yousef Haik, Nacir Tit, Ahmad Ayesh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The present work investigates the effects of combination of lead sulfide PbS quantum dots and cadmium sulfide CdS nanoparticles (NPs), with n-type and p-type semiconductors, on the photovoltaic performance of heterojunction solar cells. Namely, p-type semiconductors are: poly[3,4-ethylenedioxythiophene]–poly[styrenesulfonate] (PEDOT:PSS), copper oxide (CuO) NPs and graphene oxide (GO); while n-type semiconductors are: zinc oxide (ZnO) NPs and titanium dioxide (TiO2) NPs. The above were used to fabricate heterojunction solar cell structures via spin coating, chemical bath deposition and SILAR cycle methods. The morphology and energy band diagram for each solar cell were examined. The photovoltaic performance of the cells was measured under 1 sun illumination (irradiation of 100 mW/cm2). This efficiency ranged between 0.388 and 5.04 %. The solar cell with FTO/ZnO/TiO2/CdS/PbS/PEDOT:PSS/Au structure and optimum layers’ thickness exhibited a short-circuit current of 24.2 mA/cm2, open circuit voltage of 544 mV, a fill factor of 38.2 % and a power conversion efficiency of 5.04 % with reliably good stability. This is related to the uniform surface morphology throughout every cell layer without voids, pinholes or cracks. Furthermore, gradual band energy levels alignment of n-type and p-type NPs (CdS/PbS), as well as high hole mobility of PEDOT:PSS and the high electron affinity of ZnO and TiO2 are other major factors that controls quantum efficiency.

Original languageEnglish
Pages (from-to)3328-3340
Number of pages13
JournalJournal of Materials Science: Materials in Electronics
Volume27
Issue number4
DOIs
Publication statusPublished - 1 Apr 2016
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Heterojunctions
heterojunctions
Solar cells
Zinc Oxide
solar cells
quantum dots
zinc oxides
Nanoparticles
nanoparticles
p-type semiconductors
Zinc oxide
Semiconductor materials
lead sulfides
n-type semiconductors
cadmium sulfides
hole mobility
copper oxides
pinholes
short circuit currents

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

PbS/CdS heterojunction quantum dot solar cells. / Dagher, Sawsan; Haik, Yousef; Tit, Nacir; Ayesh, Ahmad.

In: Journal of Materials Science: Materials in Electronics, Vol. 27, No. 4, 01.04.2016, p. 3328-3340.

Research output: Contribution to journalArticle

Dagher, Sawsan ; Haik, Yousef ; Tit, Nacir ; Ayesh, Ahmad. / PbS/CdS heterojunction quantum dot solar cells. In: Journal of Materials Science: Materials in Electronics. 2016 ; Vol. 27, No. 4. pp. 3328-3340.
@article{47ab24446cbb45ad8a403a371c8a2a28,
title = "PbS/CdS heterojunction quantum dot solar cells",
abstract = "The present work investigates the effects of combination of lead sulfide PbS quantum dots and cadmium sulfide CdS nanoparticles (NPs), with n-type and p-type semiconductors, on the photovoltaic performance of heterojunction solar cells. Namely, p-type semiconductors are: poly[3,4-ethylenedioxythiophene]–poly[styrenesulfonate] (PEDOT:PSS), copper oxide (CuO) NPs and graphene oxide (GO); while n-type semiconductors are: zinc oxide (ZnO) NPs and titanium dioxide (TiO2) NPs. The above were used to fabricate heterojunction solar cell structures via spin coating, chemical bath deposition and SILAR cycle methods. The morphology and energy band diagram for each solar cell were examined. The photovoltaic performance of the cells was measured under 1 sun illumination (irradiation of 100 mW/cm2). This efficiency ranged between 0.388 and 5.04 {\%}. The solar cell with FTO/ZnO/TiO2/CdS/PbS/PEDOT:PSS/Au structure and optimum layers’ thickness exhibited a short-circuit current of 24.2 mA/cm2, open circuit voltage of 544 mV, a fill factor of 38.2 {\%} and a power conversion efficiency of 5.04 {\%} with reliably good stability. This is related to the uniform surface morphology throughout every cell layer without voids, pinholes or cracks. Furthermore, gradual band energy levels alignment of n-type and p-type NPs (CdS/PbS), as well as high hole mobility of PEDOT:PSS and the high electron affinity of ZnO and TiO2 are other major factors that controls quantum efficiency.",
author = "Sawsan Dagher and Yousef Haik and Nacir Tit and Ahmad Ayesh",
year = "2016",
month = "4",
day = "1",
doi = "10.1007/s10854-015-4162-1",
language = "English",
volume = "27",
pages = "3328--3340",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - PbS/CdS heterojunction quantum dot solar cells

AU - Dagher, Sawsan

AU - Haik, Yousef

AU - Tit, Nacir

AU - Ayesh, Ahmad

PY - 2016/4/1

Y1 - 2016/4/1

N2 - The present work investigates the effects of combination of lead sulfide PbS quantum dots and cadmium sulfide CdS nanoparticles (NPs), with n-type and p-type semiconductors, on the photovoltaic performance of heterojunction solar cells. Namely, p-type semiconductors are: poly[3,4-ethylenedioxythiophene]–poly[styrenesulfonate] (PEDOT:PSS), copper oxide (CuO) NPs and graphene oxide (GO); while n-type semiconductors are: zinc oxide (ZnO) NPs and titanium dioxide (TiO2) NPs. The above were used to fabricate heterojunction solar cell structures via spin coating, chemical bath deposition and SILAR cycle methods. The morphology and energy band diagram for each solar cell were examined. The photovoltaic performance of the cells was measured under 1 sun illumination (irradiation of 100 mW/cm2). This efficiency ranged between 0.388 and 5.04 %. The solar cell with FTO/ZnO/TiO2/CdS/PbS/PEDOT:PSS/Au structure and optimum layers’ thickness exhibited a short-circuit current of 24.2 mA/cm2, open circuit voltage of 544 mV, a fill factor of 38.2 % and a power conversion efficiency of 5.04 % with reliably good stability. This is related to the uniform surface morphology throughout every cell layer without voids, pinholes or cracks. Furthermore, gradual band energy levels alignment of n-type and p-type NPs (CdS/PbS), as well as high hole mobility of PEDOT:PSS and the high electron affinity of ZnO and TiO2 are other major factors that controls quantum efficiency.

AB - The present work investigates the effects of combination of lead sulfide PbS quantum dots and cadmium sulfide CdS nanoparticles (NPs), with n-type and p-type semiconductors, on the photovoltaic performance of heterojunction solar cells. Namely, p-type semiconductors are: poly[3,4-ethylenedioxythiophene]–poly[styrenesulfonate] (PEDOT:PSS), copper oxide (CuO) NPs and graphene oxide (GO); while n-type semiconductors are: zinc oxide (ZnO) NPs and titanium dioxide (TiO2) NPs. The above were used to fabricate heterojunction solar cell structures via spin coating, chemical bath deposition and SILAR cycle methods. The morphology and energy band diagram for each solar cell were examined. The photovoltaic performance of the cells was measured under 1 sun illumination (irradiation of 100 mW/cm2). This efficiency ranged between 0.388 and 5.04 %. The solar cell with FTO/ZnO/TiO2/CdS/PbS/PEDOT:PSS/Au structure and optimum layers’ thickness exhibited a short-circuit current of 24.2 mA/cm2, open circuit voltage of 544 mV, a fill factor of 38.2 % and a power conversion efficiency of 5.04 % with reliably good stability. This is related to the uniform surface morphology throughout every cell layer without voids, pinholes or cracks. Furthermore, gradual band energy levels alignment of n-type and p-type NPs (CdS/PbS), as well as high hole mobility of PEDOT:PSS and the high electron affinity of ZnO and TiO2 are other major factors that controls quantum efficiency.

UR - http://www.scopus.com/inward/record.url?scp=84961216269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961216269&partnerID=8YFLogxK

U2 - 10.1007/s10854-015-4162-1

DO - 10.1007/s10854-015-4162-1

M3 - Article

VL - 27

SP - 3328

EP - 3340

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 4

ER -