Passivation of TiO2 by ultra-thin Al-oxide

Th Dittrich, H. J. Muffler, M. Vogel, T. Guminskaya, A. Ogacho, Abdelhak Belaidi, E. Strub, W. Bohne, J. Rohrich, O. Hilt, M. Ch Lux-Steiner

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The passivation of sol-gel TiO2 by ultra-thin layers of Al-oxide has been investigated using transient and spectral photovoltage (PV) techniques. The ultra-thin layers of Al-oxide were prepared by the ion-layer gas reaction (ILGAR) technique and modified by thermal treatments in air, vacuum or Ar/H2S atmosphere. The samples where characterized by elastic recoil detection analysis (ERDA), X-ray photoelectron spectroscopy (XPS), and contact potential difference (CPD) technique. Without an Al-oxide surface layer, electronic states in the forbidden gap of TiO2 are formed during thermal treatments in vacuum and Ar/H2S. The trap density is strongly reduced at the TiO2/Al-oxide interface. The formation of electronic defects is prevented by a closed ultra-thin layer of Al-oxide.

Original languageEnglish
Pages (from-to)236-243
Number of pages8
JournalApplied Surface Science
Volume240
Issue number1-4
DOIs
Publication statusPublished - 15 Feb 2005
Externally publishedYes

Fingerprint

Passivation
Oxides
passivity
oxides
Heat treatment
Vacuum
contact potentials
vacuum
photovoltages
Electronic states
electronics
Sol-gels
surface layers
X ray photoelectron spectroscopy
Gases
traps
photoelectron spectroscopy
gels
Ions
atmospheres

Keywords

  • Al-oxide
  • Passivation
  • Photovoltage
  • Titania

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Dittrich, T., Muffler, H. J., Vogel, M., Guminskaya, T., Ogacho, A., Belaidi, A., ... Lux-Steiner, M. C. (2005). Passivation of TiO2 by ultra-thin Al-oxide. Applied Surface Science, 240(1-4), 236-243. https://doi.org/10.1016/j.apsusc.2004.06.142

Passivation of TiO2 by ultra-thin Al-oxide. / Dittrich, Th; Muffler, H. J.; Vogel, M.; Guminskaya, T.; Ogacho, A.; Belaidi, Abdelhak; Strub, E.; Bohne, W.; Rohrich, J.; Hilt, O.; Lux-Steiner, M. Ch.

In: Applied Surface Science, Vol. 240, No. 1-4, 15.02.2005, p. 236-243.

Research output: Contribution to journalArticle

Dittrich, T, Muffler, HJ, Vogel, M, Guminskaya, T, Ogacho, A, Belaidi, A, Strub, E, Bohne, W, Rohrich, J, Hilt, O & Lux-Steiner, MC 2005, 'Passivation of TiO2 by ultra-thin Al-oxide', Applied Surface Science, vol. 240, no. 1-4, pp. 236-243. https://doi.org/10.1016/j.apsusc.2004.06.142
Dittrich T, Muffler HJ, Vogel M, Guminskaya T, Ogacho A, Belaidi A et al. Passivation of TiO2 by ultra-thin Al-oxide. Applied Surface Science. 2005 Feb 15;240(1-4):236-243. https://doi.org/10.1016/j.apsusc.2004.06.142
Dittrich, Th ; Muffler, H. J. ; Vogel, M. ; Guminskaya, T. ; Ogacho, A. ; Belaidi, Abdelhak ; Strub, E. ; Bohne, W. ; Rohrich, J. ; Hilt, O. ; Lux-Steiner, M. Ch. / Passivation of TiO2 by ultra-thin Al-oxide. In: Applied Surface Science. 2005 ; Vol. 240, No. 1-4. pp. 236-243.
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