P-type CuI window-by silar on N-type CISCuT absorber layers: Preparation, characterization and its device performance

B. R. Sankapal, A. Ennaoui, M. Ch Lux-Steiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Successive ionic layer adsorption and reaction (SILAR) is a modified version of chemical bath deposition (CBD) method, in a way that substrate is immersed in cationic and anionic precursors, alternatively and film growth takes place only on the substrate surface. SILAR method is employed to deposit copper (I) iodide as solar cell window material at room temperature (25°C). Glass and CuInS2 (CIS) are used as substrates. Deposition conditions for Cul are optimized on glass substrate and the same are used on CIS. On both the substrates, structure of Cul is Zinkblende with γ-phase. Surface morphology of Cul is crystalline on glass substrate while fibrous on CIS, which converts to crystalline after wet chemical iodine treatment at room temperature. On the glass substrate, these film exhibit transmission over 75 % in the wavelength range 400-800 nm with the optical band gap of 2.97 eV for 300 nm thickness. Device completion was made for Cul (before and after iodine treatment) on CIS and photovoltaic parameters are reported.

Original languageEnglish
Title of host publicationChemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium
Pages89-95
Number of pages7
Publication statusPublished - 20 Jul 2006
Event203rd Electrochemical Society Meeting - Paris, France
Duration: 27 Apr 20032 May 2003

Publication series

NameProceedings - Electrochemical Society
VolumePV 2003-32

Conference

Conference203rd Electrochemical Society Meeting
CountryFrance
CityParis
Period27/4/032/5/03

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sankapal, B. R., Ennaoui, A., & Lux-Steiner, M. C. (2006). P-type CuI window-by silar on N-type CISCuT absorber layers: Preparation, characterization and its device performance. In Chemical Solution Deposition of Semiconducting and Non-Metallic Films - Proceedings of the International Symposium (pp. 89-95). (Proceedings - Electrochemical Society; Vol. PV 2003-32).