P-type CuI window-by silar on N-type CISCuT absorber layers

Preparation, characterization and its device performance

B. R. Sankapal, A. Ennaoui, M. Ch Lux-Steiner

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Successive ionic layer adsorption and reaction (SILAR) is a modified version of chemical bath deposition (CBD) method, in a way that substrate is immersed in cationic and anionic precursors, alternatively and film growth takes place only on the substrate surface. SILAR method is employed to deposit copper (I) iodide as solar cell window material at room temperature (25°C). Glass and CuInS2 (CIS) are used as substrates. Deposition conditions for Cul are optimized on glass substrate and the same are used on CIS. On both the substrates, structure of Cul is Zinkblende with γ-phase. Surface morphology of Cul is crystalline on glass substrate while fibrous on CIS, which converts to crystalline after wet chemical iodine treatment at room temperature. On the glass substrate, these film exhibit transmission over 75 % in the wavelength range 400-800 nm with the optical band gap of 2.97 eV for 300 nm thickness. Device completion was made for Cul (before and after iodine treatment) on CIS and photovoltaic parameters are reported.

Original languageEnglish
Title of host publicationProceedings - Electrochemical Society
Pages89-95
Number of pages7
VolumePV 2003-32
Publication statusPublished - 2006
Externally publishedYes
Event203rd Electrochemical Society Meeting - Paris
Duration: 27 Apr 20032 May 2003

Other

Other203rd Electrochemical Society Meeting
CityParis
Period27/4/032/5/03

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Substrates
Glass
Iodine
Copper deposits
Crystalline materials
Adsorption
Optical band gaps
Film growth
Surface morphology
Solar cells
Wavelength
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sankapal, B. R., Ennaoui, A., & Lux-Steiner, M. C. (2006). P-type CuI window-by silar on N-type CISCuT absorber layers: Preparation, characterization and its device performance. In Proceedings - Electrochemical Society (Vol. PV 2003-32, pp. 89-95)

P-type CuI window-by silar on N-type CISCuT absorber layers : Preparation, characterization and its device performance. / Sankapal, B. R.; Ennaoui, A.; Lux-Steiner, M. Ch.

Proceedings - Electrochemical Society. Vol. PV 2003-32 2006. p. 89-95.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sankapal, BR, Ennaoui, A & Lux-Steiner, MC 2006, P-type CuI window-by silar on N-type CISCuT absorber layers: Preparation, characterization and its device performance. in Proceedings - Electrochemical Society. vol. PV 2003-32, pp. 89-95, 203rd Electrochemical Society Meeting, Paris, 27/4/03.
Sankapal BR, Ennaoui A, Lux-Steiner MC. P-type CuI window-by silar on N-type CISCuT absorber layers: Preparation, characterization and its device performance. In Proceedings - Electrochemical Society. Vol. PV 2003-32. 2006. p. 89-95
Sankapal, B. R. ; Ennaoui, A. ; Lux-Steiner, M. Ch. / P-type CuI window-by silar on N-type CISCuT absorber layers : Preparation, characterization and its device performance. Proceedings - Electrochemical Society. Vol. PV 2003-32 2006. pp. 89-95
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