Oxygen ion conductance in epitaxially grown thin film electrolytes

S. Thevuthasan, Z. Yu, S. Kuchibhatla, L. V. Saraf, O. A. Marina, V. Shutthanandan, P. Nachimuthu, C. M. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper briefly summarizes the results from a project aimed to develop an understanding of oxygen ionic transport processes in highly oriented thin film oxide materials to enable the design of new types of electrolyte materials for solid state electrochemical devices. We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented doped ceria. zriconia thin films on single crystal C-Al2O3 along with multilayered hetero-structures. The influence of dopant concentration, interfaces, defects and crystalline quality on oxygen ionic conductivity has been critically analyzed using various surface and bulk sensitive capabilities. Although, preferred (111) orientation was preserved in high quality samaria doped ceria films up to a 10 atom% Sm doping, the films started to show polycrystalline features for higher Sm doping, Maximum conductivity was obtained for 5 atom% Sm doping in ceria, In the case of gadolinio doped ceria/zirconia multi-layer films, total conductivity was found to increase with the increasing number of layers.

Original languageEnglish
Title of host publicationCeramic Engineering and Science Proceedings
Pages229-240
Number of pages12
Volume29
Edition5
Publication statusPublished - 2009
Externally publishedYes
EventAdvances in Solid Oxide Fuel Cells IV - 32nd International Conference on Advanced Ceramics and Composites - Daytona Beach, FL
Duration: 27 Jan 20081 Feb 2008

Other

OtherAdvances in Solid Oxide Fuel Cells IV - 32nd International Conference on Advanced Ceramics and Composites
CityDaytona Beach, FL
Period27/1/081/2/08

Fingerprint

Cerium compounds
Electrolytes
Doping (additives)
Ions
Oxygen
Thin films
Atoms
Multilayer films
Ionic conductivity
Molecular beam epitaxy
Zirconia
Oxides
Single crystals
Crystalline materials
Plasmas
Defects

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Thevuthasan, S., Yu, Z., Kuchibhatla, S., Saraf, L. V., Marina, O. A., Shutthanandan, V., ... Wang, C. M. (2009). Oxygen ion conductance in epitaxially grown thin film electrolytes. In Ceramic Engineering and Science Proceedings (5 ed., Vol. 29, pp. 229-240)

Oxygen ion conductance in epitaxially grown thin film electrolytes. / Thevuthasan, S.; Yu, Z.; Kuchibhatla, S.; Saraf, L. V.; Marina, O. A.; Shutthanandan, V.; Nachimuthu, P.; Wang, C. M.

Ceramic Engineering and Science Proceedings. Vol. 29 5. ed. 2009. p. 229-240.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Thevuthasan, S, Yu, Z, Kuchibhatla, S, Saraf, LV, Marina, OA, Shutthanandan, V, Nachimuthu, P & Wang, CM 2009, Oxygen ion conductance in epitaxially grown thin film electrolytes. in Ceramic Engineering and Science Proceedings. 5 edn, vol. 29, pp. 229-240, Advances in Solid Oxide Fuel Cells IV - 32nd International Conference on Advanced Ceramics and Composites, Daytona Beach, FL, 27/1/08.
Thevuthasan S, Yu Z, Kuchibhatla S, Saraf LV, Marina OA, Shutthanandan V et al. Oxygen ion conductance in epitaxially grown thin film electrolytes. In Ceramic Engineering and Science Proceedings. 5 ed. Vol. 29. 2009. p. 229-240
Thevuthasan, S. ; Yu, Z. ; Kuchibhatla, S. ; Saraf, L. V. ; Marina, O. A. ; Shutthanandan, V. ; Nachimuthu, P. ; Wang, C. M. / Oxygen ion conductance in epitaxially grown thin film electrolytes. Ceramic Engineering and Science Proceedings. Vol. 29 5. ed. 2009. pp. 229-240
@inproceedings{2f3f81caa92e4ea79cbb25867ebb7aa0,
title = "Oxygen ion conductance in epitaxially grown thin film electrolytes",
abstract = "This paper briefly summarizes the results from a project aimed to develop an understanding of oxygen ionic transport processes in highly oriented thin film oxide materials to enable the design of new types of electrolyte materials for solid state electrochemical devices. We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented doped ceria. zriconia thin films on single crystal C-Al2O3 along with multilayered hetero-structures. The influence of dopant concentration, interfaces, defects and crystalline quality on oxygen ionic conductivity has been critically analyzed using various surface and bulk sensitive capabilities. Although, preferred (111) orientation was preserved in high quality samaria doped ceria films up to a 10 atom{\%} Sm doping, the films started to show polycrystalline features for higher Sm doping, Maximum conductivity was obtained for 5 atom{\%} Sm doping in ceria, In the case of gadolinio doped ceria/zirconia multi-layer films, total conductivity was found to increase with the increasing number of layers.",
author = "S. Thevuthasan and Z. Yu and S. Kuchibhatla and Saraf, {L. V.} and Marina, {O. A.} and V. Shutthanandan and P. Nachimuthu and Wang, {C. M.}",
year = "2009",
language = "English",
isbn = "9780470344965",
volume = "29",
pages = "229--240",
booktitle = "Ceramic Engineering and Science Proceedings",
edition = "5",

}

TY - GEN

T1 - Oxygen ion conductance in epitaxially grown thin film electrolytes

AU - Thevuthasan, S.

AU - Yu, Z.

AU - Kuchibhatla, S.

AU - Saraf, L. V.

AU - Marina, O. A.

AU - Shutthanandan, V.

AU - Nachimuthu, P.

AU - Wang, C. M.

PY - 2009

Y1 - 2009

N2 - This paper briefly summarizes the results from a project aimed to develop an understanding of oxygen ionic transport processes in highly oriented thin film oxide materials to enable the design of new types of electrolyte materials for solid state electrochemical devices. We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented doped ceria. zriconia thin films on single crystal C-Al2O3 along with multilayered hetero-structures. The influence of dopant concentration, interfaces, defects and crystalline quality on oxygen ionic conductivity has been critically analyzed using various surface and bulk sensitive capabilities. Although, preferred (111) orientation was preserved in high quality samaria doped ceria films up to a 10 atom% Sm doping, the films started to show polycrystalline features for higher Sm doping, Maximum conductivity was obtained for 5 atom% Sm doping in ceria, In the case of gadolinio doped ceria/zirconia multi-layer films, total conductivity was found to increase with the increasing number of layers.

AB - This paper briefly summarizes the results from a project aimed to develop an understanding of oxygen ionic transport processes in highly oriented thin film oxide materials to enable the design of new types of electrolyte materials for solid state electrochemical devices. We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented doped ceria. zriconia thin films on single crystal C-Al2O3 along with multilayered hetero-structures. The influence of dopant concentration, interfaces, defects and crystalline quality on oxygen ionic conductivity has been critically analyzed using various surface and bulk sensitive capabilities. Although, preferred (111) orientation was preserved in high quality samaria doped ceria films up to a 10 atom% Sm doping, the films started to show polycrystalline features for higher Sm doping, Maximum conductivity was obtained for 5 atom% Sm doping in ceria, In the case of gadolinio doped ceria/zirconia multi-layer films, total conductivity was found to increase with the increasing number of layers.

UR - http://www.scopus.com/inward/record.url?scp=62849095397&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62849095397&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:62849095397

SN - 9780470344965

VL - 29

SP - 229

EP - 240

BT - Ceramic Engineering and Science Proceedings

ER -