Abstract
Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ∼50 ps x-ray pulse width convoluted with the ∼200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.
| Original language | English |
|---|---|
| Article number | 051109 |
| Journal | Applied Physics Letters |
| Volume | 102 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 4 Feb 2013 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Optoelectronic measurement of x-ray synchrotron pulses : A proof of concept demonstration. / Durbin, Stephen M.; Mahmoud, Aamer; Caffee, Marc; Savikhin, Sergei; Dufresne, Eric M.; Wen, Haidan; Li, Yuelin.
In: Applied Physics Letters, Vol. 102, No. 5, 051109, 04.02.2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Optoelectronic measurement of x-ray synchrotron pulses
T2 - A proof of concept demonstration
AU - Durbin, Stephen M.
AU - Mahmoud, Aamer
AU - Caffee, Marc
AU - Savikhin, Sergei
AU - Dufresne, Eric M.
AU - Wen, Haidan
AU - Li, Yuelin
PY - 2013/2/4
Y1 - 2013/2/4
N2 - Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ∼50 ps x-ray pulse width convoluted with the ∼200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.
AB - Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ∼50 ps x-ray pulse width convoluted with the ∼200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.
UR - http://www.scopus.com/inward/record.url?scp=84874084437&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84874084437&partnerID=8YFLogxK
U2 - 10.1063/1.4791559
DO - 10.1063/1.4791559
M3 - Article
VL - 102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 051109
ER -