Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells

Olivier Deparis, Ounsi El Daif

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.

Original languageEnglish
Pages (from-to)4230-4232
Number of pages3
JournalOptics Letters
Volume37
Issue number20
DOIs
Publication statusPublished - 15 Oct 2012
Externally publishedYes

Fingerprint

photocurrents
Silicon
solar cells
Optics and Photonics
Light
Refractometry
optimization
augmentation
amorphous silicon
photonics
refractivity
material absorption
antireflection coatings
thin films
Photons
irradiance
Oxides
incidence
tuning
mirrors

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells. / Deparis, Olivier; El Daif, Ounsi.

In: Optics Letters, Vol. 37, No. 20, 15.10.2012, p. 4230-4232.

Research output: Contribution to journalArticle

Deparis, Olivier ; El Daif, Ounsi. / Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells. In: Optics Letters. 2012 ; Vol. 37, No. 20. pp. 4230-4232.
@article{07ca8817b2604812b6bbd5cebb3ba9ec,
title = "Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells",
abstract = "In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10{\%} with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.",
author = "Olivier Deparis and {El Daif}, Ounsi",
year = "2012",
month = "10",
day = "15",
doi = "10.1364/OL.37.004230",
language = "English",
volume = "37",
pages = "4230--4232",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "The Optical Society",
number = "20",

}

TY - JOUR

T1 - Optimization of slow light one-dimensional Bragg structures for photocurrent enhancement in solar cells

AU - Deparis, Olivier

AU - El Daif, Ounsi

PY - 2012/10/15

Y1 - 2012/10/15

N2 - In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.

AB - In 1D photonic crystal Bragg structures, strong localization of the light occurs in the high refractive index layers at wavelengths on the red edge of the photonic bandgap. We exploit this slow light effect for thin film solar cells in order to increase the absorption of light in silicon, as the latter has a high refractive index. Amorphous silicon and a transparent conductive oxide are chosen as high-index and low-index materials, respectively. Reference thin film cells have equivalent total thickness of amorphous silicon, plus antireflection coating and optional metallic back mirror. Through transfer-matrix calculations, we demonstrate that the spectrally integrated photon flux absorbed in active layers, hence the photocurrent, is enhanced by at least 10% with respect to reference using only a few periods. The enhancement is robust with respect to the light incidence angle. The key of such an enhancement is the tuning of the red edge to both the solar irradiance spectrum and the intrinsic material absorption spectrum, which is achieved by suitably selecting the layer thicknesses.

UR - http://www.scopus.com/inward/record.url?scp=84867466146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867466146&partnerID=8YFLogxK

U2 - 10.1364/OL.37.004230

DO - 10.1364/OL.37.004230

M3 - Article

C2 - 23073420

AN - SCOPUS:84867466146

VL - 37

SP - 4230

EP - 4232

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 20

ER -