Optically implemented broadband blueshift switch in the terahertz regime

Nian Hai Shen, Maria Massaouti, Mutlu Gokkavas, Jean Michel Manceau, Ekmel Ozbay, Maria Kafesaki, Thomas Koschny, Stylianos Tzortzakis, Costas M. Soukoulis

Research output: Contribution to journalArticle

168 Citations (Scopus)

Abstract

We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.

Original languageEnglish
Article number037403
JournalPhysical Review Letters
Volume106
Issue number3
DOIs
Publication statusPublished - 18 Jan 2011
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Shen, N. H., Massaouti, M., Gokkavas, M., Manceau, J. M., Ozbay, E., Kafesaki, M., Koschny, T., Tzortzakis, S., & Soukoulis, C. M. (2011). Optically implemented broadband blueshift switch in the terahertz regime. Physical Review Letters, 106(3), [037403]. https://doi.org/10.1103/PhysRevLett.106.037403