Optically active defects in SiO2

The nonbridging oxygen center and the interstitial OH molecule

T. Bakos, Sergey Rashkeev, S. T. Pantelides

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Irradiation of high-OH containing amorphous SiO2 is known to introduce a broad absorption band at 4.8 eV and an associated sharp photoluminescence band in the visible red domain, at 1.9 eV. Both absorption and luminescence bands have been unambigously attributed to the nonbridging oxygen (NBO) center, a common defect in irradiated SiO2. Using results of first-principles calculations we show that the NBO center and the interstitial OH molecule (OHi) may both be responsible for the observed absorption and luminescence bands. Although the absorption spectra of the two defects are very similar, their luminescence spectra are different, but overlapping. We found that the NBO center has a sharp luminescence line centered around 1.8 eV in the visible red, whereas OHi molecules have a wide emission spectrum ranging from the infrared (0.8 eV) to visible red (1.8 eV). Investigation of the results show that the difference in the emission spectra is due to the different extent of atomic and electronic relaxations around the two defects: in the case of the NBO, site-independent electronic relaxations are responsible for the defect emitting a photon only at a particular energy, whereas in the case of OHi molecules an interplay between site-dependent atomic and (therefore site-dependent) electronic relaxations result in a wide emission spectrum. A further, intriguing result is that both defects show similar vibrational and polarization properties, therefore their contribution to the red luminescence band of irradiated amorphous SiO 2 may not have been decoupled in previous studies.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number7
DOIs
Publication statusPublished - 1 Aug 2004
Externally publishedYes

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Luminescence
interstitials
luminescence
Oxygen
Defects
Molecules
defects
absorption spectra
oxygen
emission spectra
molecules
Absorption spectra
electronics
Photoluminescence
Photons
Irradiation
Polarization
Infrared radiation
photoluminescence
irradiation

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Optically active defects in SiO2 : The nonbridging oxygen center and the interstitial OH molecule. / Bakos, T.; Rashkeev, Sergey; Pantelides, S. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 70, No. 7, 01.08.2004.

Research output: Contribution to journalArticle

@article{9af3379d1ce74ca4879cbdb5614e962e,
title = "Optically active defects in SiO2: The nonbridging oxygen center and the interstitial OH molecule",
abstract = "Irradiation of high-OH containing amorphous SiO2 is known to introduce a broad absorption band at 4.8 eV and an associated sharp photoluminescence band in the visible red domain, at 1.9 eV. Both absorption and luminescence bands have been unambigously attributed to the nonbridging oxygen (NBO) center, a common defect in irradiated SiO2. Using results of first-principles calculations we show that the NBO center and the interstitial OH molecule (OHi) may both be responsible for the observed absorption and luminescence bands. Although the absorption spectra of the two defects are very similar, their luminescence spectra are different, but overlapping. We found that the NBO center has a sharp luminescence line centered around 1.8 eV in the visible red, whereas OHi molecules have a wide emission spectrum ranging from the infrared (0.8 eV) to visible red (1.8 eV). Investigation of the results show that the difference in the emission spectra is due to the different extent of atomic and electronic relaxations around the two defects: in the case of the NBO, site-independent electronic relaxations are responsible for the defect emitting a photon only at a particular energy, whereas in the case of OHi molecules an interplay between site-dependent atomic and (therefore site-dependent) electronic relaxations result in a wide emission spectrum. A further, intriguing result is that both defects show similar vibrational and polarization properties, therefore their contribution to the red luminescence band of irradiated amorphous SiO 2 may not have been decoupled in previous studies.",
author = "T. Bakos and Sergey Rashkeev and Pantelides, {S. T.}",
year = "2004",
month = "8",
day = "1",
doi = "10.1103/PhysRevB.70.075203",
language = "English",
volume = "70",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Optically active defects in SiO2

T2 - The nonbridging oxygen center and the interstitial OH molecule

AU - Bakos, T.

AU - Rashkeev, Sergey

AU - Pantelides, S. T.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Irradiation of high-OH containing amorphous SiO2 is known to introduce a broad absorption band at 4.8 eV and an associated sharp photoluminescence band in the visible red domain, at 1.9 eV. Both absorption and luminescence bands have been unambigously attributed to the nonbridging oxygen (NBO) center, a common defect in irradiated SiO2. Using results of first-principles calculations we show that the NBO center and the interstitial OH molecule (OHi) may both be responsible for the observed absorption and luminescence bands. Although the absorption spectra of the two defects are very similar, their luminescence spectra are different, but overlapping. We found that the NBO center has a sharp luminescence line centered around 1.8 eV in the visible red, whereas OHi molecules have a wide emission spectrum ranging from the infrared (0.8 eV) to visible red (1.8 eV). Investigation of the results show that the difference in the emission spectra is due to the different extent of atomic and electronic relaxations around the two defects: in the case of the NBO, site-independent electronic relaxations are responsible for the defect emitting a photon only at a particular energy, whereas in the case of OHi molecules an interplay between site-dependent atomic and (therefore site-dependent) electronic relaxations result in a wide emission spectrum. A further, intriguing result is that both defects show similar vibrational and polarization properties, therefore their contribution to the red luminescence band of irradiated amorphous SiO 2 may not have been decoupled in previous studies.

AB - Irradiation of high-OH containing amorphous SiO2 is known to introduce a broad absorption band at 4.8 eV and an associated sharp photoluminescence band in the visible red domain, at 1.9 eV. Both absorption and luminescence bands have been unambigously attributed to the nonbridging oxygen (NBO) center, a common defect in irradiated SiO2. Using results of first-principles calculations we show that the NBO center and the interstitial OH molecule (OHi) may both be responsible for the observed absorption and luminescence bands. Although the absorption spectra of the two defects are very similar, their luminescence spectra are different, but overlapping. We found that the NBO center has a sharp luminescence line centered around 1.8 eV in the visible red, whereas OHi molecules have a wide emission spectrum ranging from the infrared (0.8 eV) to visible red (1.8 eV). Investigation of the results show that the difference in the emission spectra is due to the different extent of atomic and electronic relaxations around the two defects: in the case of the NBO, site-independent electronic relaxations are responsible for the defect emitting a photon only at a particular energy, whereas in the case of OHi molecules an interplay between site-dependent atomic and (therefore site-dependent) electronic relaxations result in a wide emission spectrum. A further, intriguing result is that both defects show similar vibrational and polarization properties, therefore their contribution to the red luminescence band of irradiated amorphous SiO 2 may not have been decoupled in previous studies.

UR - http://www.scopus.com/inward/record.url?scp=19544370870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19544370870&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.70.075203

DO - 10.1103/PhysRevB.70.075203

M3 - Article

VL - 70

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 7

ER -