Cu(In,Ga)Se2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl2, InCl3, GaCl3 and H2SeO3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn1-xGaxSe2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.
|Number of pages||6|
|Journal||Journal De Physique. IV : JP|
|Publication status||Published - 1 Jan 2004|
|Event||REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials - Agadir, Morocco|
Duration: 30 Oct 2002 → 1 Nov 2002
ASJC Scopus subject areas
- Physics and Astronomy(all)