One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution

M. Fahoume, H. Boudraine, M. Aggour, F. Chraïbi, A. Ennaoui, J. L. Delplancke

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
EditorsA. Benlhachemi, H. Benyaich, K. Bouabid, A. Boukhari, M. Elaatmani, B. Es-Sakhi, A. Ihlal, S. Khairoune, I. Mansouri
Pages75-80
Number of pages6
Volume123
DOIs
Publication statusPublished - 2004
Externally publishedYes
EventREMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials - Agadir, Morocco
Duration: 30 Oct 20021 Nov 2002

Other

OtherREMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials
CountryMorocco
CityAgadir
Period30/10/021/11/02

Fingerprint

electrodeposition
aqueous solutions
thin films
microanalysis
x rays
atoms
transmission electron microscopy
scanning electron microscopy
energy
shift
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fahoume, M., Boudraine, H., Aggour, M., Chraïbi, F., Ennaoui, A., & Delplancke, J. L. (2004). One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution In A. Benlhachemi, H. Benyaich, K. Bouabid, A. Boukhari, M. Elaatmani, B. Es-Sakhi, A. Ihlal, S. Khairoune, ... I. Mansouri (Eds.), Journal De Physique. IV : JP (Vol. 123, pp. 75-80) https://doi.org/10.1051/jp4:2005123012

One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution . / Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

Journal De Physique. IV : JP. ed. / A. Benlhachemi; H. Benyaich; K. Bouabid; A. Boukhari; M. Elaatmani; B. Es-Sakhi; A. Ihlal; S. Khairoune; I. Mansouri. Vol. 123 2004. p. 75-80.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fahoume, M, Boudraine, H, Aggour, M, Chraïbi, F, Ennaoui, A & Delplancke, JL 2004, One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution in A Benlhachemi, H Benyaich, K Bouabid, A Boukhari, M Elaatmani, B Es-Sakhi, A Ihlal, S Khairoune & I Mansouri (eds), Journal De Physique. IV : JP. vol. 123, pp. 75-80, REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials, Agadir, Morocco, 30/10/02. https://doi.org/10.1051/jp4:2005123012
Fahoume M, Boudraine H, Aggour M, Chraïbi F, Ennaoui A, Delplancke JL. One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution In Benlhachemi A, Benyaich H, Bouabid K, Boukhari A, Elaatmani M, Es-Sakhi B, Ihlal A, Khairoune S, Mansouri I, editors, Journal De Physique. IV : JP. Vol. 123. 2004. p. 75-80 https://doi.org/10.1051/jp4:2005123012
Fahoume, M. ; Boudraine, H. ; Aggour, M. ; Chraïbi, F. ; Ennaoui, A. ; Delplancke, J. L. / One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution Journal De Physique. IV : JP. editor / A. Benlhachemi ; H. Benyaich ; K. Bouabid ; A. Boukhari ; M. Elaatmani ; B. Es-Sakhi ; A. Ihlal ; S. Khairoune ; I. Mansouri. Vol. 123 2004. pp. 75-80
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abstract = "Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.",
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AU - Fahoume, M.

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AU - Ennaoui, A.

AU - Delplancke, J. L.

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N2 - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

AB - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

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