One, step electrodeposition of Cu(Ga,In)Se
            2 thin films from aqueous solution

M. Fahoume; H. Boudraine; M. Aggour; F. Chraïbi; A. Ennaoui; J. L. Delplancke

doi:10.1051/jp4:2005123012

One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution

M. Fahoume, H. Boudraine, M. Aggour, F. Chraïbi, A. Ennaoui, J. L. Delplancke

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

Cu(In,Ga)Se ₂ (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl ₂, InCl ₃, GaCl ₃ and H ₂SeO ₃. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn _1-xGa _xSe ₂ films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

Original language	English
Title of host publication	Journal De Physique. IV : JP
Editors	A. Benlhachemi, H. Benyaich, K. Bouabid, A. Boukhari, M. Elaatmani, B. Es-Sakhi, A. Ihlal, S. Khairoune, I. Mansouri
Pages	75-80
Number of pages	6
Volume	123
DOIs	https://doi.org/10.1051/jp4:2005123012
Publication status	Published - 2004
Externally published	Yes
Event	REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials - Agadir, Morocco Duration: 30 Oct 2002 → 1 Nov 2002

Other

Other	REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials
Country	Morocco
City	Agadir
Period	30/10/02 → 1/11/02

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Fahoume, M., Boudraine, H., Aggour, M., Chraïbi, F., Ennaoui, A., & Delplancke, J. L. (2004). One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution In A. Benlhachemi, H. Benyaich, K. Bouabid, A. Boukhari, M. Elaatmani, B. Es-Sakhi, A. Ihlal, S. Khairoune, & I. Mansouri (Eds.), Journal De Physique. IV : JP (Vol. 123, pp. 75-80) https://doi.org/10.1051/jp4:2005123012

One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution . / Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.

Journal De Physique. IV : JP. ed. / A. Benlhachemi; H. Benyaich; K. Bouabid; A. Boukhari; M. Elaatmani; B. Es-Sakhi; A. Ihlal; S. Khairoune; I. Mansouri. Vol. 123 2004. p. 75-80.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fahoume, M, Boudraine, H, Aggour, M, Chraïbi, F, Ennaoui, A & Delplancke, JL 2004, One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution in A Benlhachemi, H Benyaich, K Bouabid, A Boukhari, M Elaatmani, B Es-Sakhi, A Ihlal, S Khairoune & I Mansouri (eds), Journal De Physique. IV : JP. vol. 123, pp. 75-80, REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials, Agadir, Morocco, 30/10/02. https://doi.org/10.1051/jp4:2005123012

Fahoume M, Boudraine H, Aggour M, Chraïbi F, Ennaoui A, Delplancke JL. One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution In Benlhachemi A, Benyaich H, Bouabid K, Boukhari A, Elaatmani M, Es-Sakhi B, Ihlal A, Khairoune S, Mansouri I, editors, Journal De Physique. IV : JP. Vol. 123. 2004. p. 75-80 https://doi.org/10.1051/jp4:2005123012

Fahoume, M. ; Boudraine, H. ; Aggour, M. ; Chraïbi, F. ; Ennaoui, A. ; Delplancke, J. L. / One, step electrodeposition of Cu(Ga,In)Se ₂ thin films from aqueous solution Journal De Physique. IV : JP. editor / A. Benlhachemi ; H. Benyaich ; K. Bouabid ; A. Boukhari ; M. Elaatmani ; B. Es-Sakhi ; A. Ihlal ; S. Khairoune ; I. Mansouri. Vol. 123 2004. pp. 75-80

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abstract = "Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.",

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AU - Fahoume, M.

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AU - Ennaoui, A.

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N2 - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

AB - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.

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Access to Document

10.1051/jp4:2005123012