Abstract
Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.
| Original language | English |
|---|---|
| Title of host publication | Journal De Physique. IV : JP |
| Editors | A. Benlhachemi, H. Benyaich, K. Bouabid, A. Boukhari, M. Elaatmani, B. Es-Sakhi, A. Ihlal, S. Khairoune, I. Mansouri |
| Pages | 75-80 |
| Number of pages | 6 |
| Volume | 123 |
| DOIs | |
| Publication status | Published - 2004 |
| Externally published | Yes |
| Event | REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials - Agadir, Morocco Duration: 30 Oct 2002 → 1 Nov 2002 |
Other
| Other | REMCES IX: 9th International Seminar on the Physical Chemistry of Solid State Materials |
|---|---|
| Country | Morocco |
| City | Agadir |
| Period | 30/10/02 → 1/11/02 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution . / Fahoume, M.; Boudraine, H.; Aggour, M.; Chraïbi, F.; Ennaoui, A.; Delplancke, J. L.
Journal De Physique. IV : JP. ed. / A. Benlhachemi; H. Benyaich; K. Bouabid; A. Boukhari; M. Elaatmani; B. Es-Sakhi; A. Ihlal; S. Khairoune; I. Mansouri. Vol. 123 2004. p. 75-80.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - One, step electrodeposition of Cu(Ga,In)Se 2 thin films from aqueous solution
AU - Fahoume, M.
AU - Boudraine, H.
AU - Aggour, M.
AU - Chraïbi, F.
AU - Ennaoui, A.
AU - Delplancke, J. L.
PY - 2004
Y1 - 2004
N2 - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.
AB - Cu(In,Ga)Se 2 (CIGS) semiconducting thin films films were prepared by electrodeposition from aqueous solution containing CuCl 2, InCl 3, GaCl 3 and H 2SeO 3. The deposited material was characterized by cyclic voltammetry. The compositional, structural studies were carried out using scanning electron microscopy (SEM), energy dispersive X-ray microanalysis (EDX), X-ray diffraction (XRD) and transmission electron microscopy (TEM), X-ray analysis showed the formation of CuIn 1-xGa xSe 2 films, in the optimum conditions, with preferred orientation in the (112) direction. We observed a shift of the peaks to higher angles with increasing x, accounting for a decrease of the lattice constants when In atoms are substituted by Ga atoms. Element mapping and scanline (EDX) indicate that the Cu, In, Ga, and Se elements are homogeneously distributed.
UR - http://www.scopus.com/inward/record.url?scp=33645072452&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645072452&partnerID=8YFLogxK
U2 - 10.1051/jp4:2005123012
DO - 10.1051/jp4:2005123012
M3 - Conference contribution
AN - SCOPUS:33645072452
VL - 123
SP - 75
EP - 80
BT - Journal De Physique. IV : JP
A2 - Benlhachemi, A.
A2 - Benyaich, H.
A2 - Bouabid, K.
A2 - Boukhari, A.
A2 - Elaatmani, M.
A2 - Es-Sakhi, B.
A2 - Ihlal, A.
A2 - Khairoune, S.
A2 - Mansouri, I.
ER -