One-dimensional hopping mobility in disordered layered semiconductors: Applications to InSe

A. Khater, M. Balkanski, C. Julien, M. Weber

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Calculations are presented for a one-dimensional model of electrical transport along the c axis in disordered layered semiconductors, using a multiphonon-assisted hopping mechanism for the electronic carriers between excitons weakly bound to impurities. The excitons are intermediate states. The effect of the stacking disorder involves stochastic field variations, and consequently configurational averages that are calculated for the parallel mobility, which is obtained generally in activated form. The theoretical results are analyzed for InSe and compare favorably with measurements in this compound.

Original languageEnglish
Pages (from-to)8278-8281
Number of pages4
JournalPhysical Review B
Volume37
Issue number14
DOIs
Publication statusPublished - 1988
Externally publishedYes

Fingerprint

Excitons
excitons
disorders
Impurities
impurities
electronics
Layered semiconductors
LDS 751

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

One-dimensional hopping mobility in disordered layered semiconductors : Applications to InSe. / Khater, A.; Balkanski, M.; Julien, C.; Weber, M.

In: Physical Review B, Vol. 37, No. 14, 1988, p. 8278-8281.

Research output: Contribution to journalArticle

Khater, A. ; Balkanski, M. ; Julien, C. ; Weber, M. / One-dimensional hopping mobility in disordered layered semiconductors : Applications to InSe. In: Physical Review B. 1988 ; Vol. 37, No. 14. pp. 8278-8281.
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