Calculations are presented for a one-dimensional model of electrical transport along the c axis in disordered layered semiconductors, using a multiphonon-assisted hopping mechanism for the electronic carriers between excitons weakly bound to impurities. The excitons are intermediate states. The effect of the stacking disorder involves stochastic field variations, and consequently configurational averages that are calculated for the parallel mobility, which is obtained generally in activated form. The theoretical results are analyzed for InSe and compare favorably with measurements in this compound.
ASJC Scopus subject areas
- Condensed Matter Physics