On the role of stacking faults on dislocation generation and dislocation cluster formation in multicrystalline silicon

Maulid Kivambe, Torunn Ervik, Birgit Ryningen, Gaute Stokkan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The microstructure of highly dislocated stacking fault regions (dislocation density > 10 6cm-2) in industrial cast multicrystalline silicon has been investigated by light microscopy, scanning electron microscopy, and transmission electron microscopy. Our observations indicate that stacking faults form strong barriers to lattice dislocation movement and to the formation of sub grain boundaries. Stepped and curved stacking fault edges appear to generate dislocations. The observations suggest that stacking faults play an important role in the plasticity as well as in the formation of the microstructure of dislocations in multicrystalline silicon.

Original languageEnglish
Article number103528
JournalJournal of Applied Physics
Volume112
Issue number10
DOIs
Publication statusPublished - 15 Nov 2012
Externally publishedYes

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crystal defects
silicon
microstructure
plastic properties
casts
grain boundaries
microscopy
transmission electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

On the role of stacking faults on dislocation generation and dislocation cluster formation in multicrystalline silicon. / Kivambe, Maulid; Ervik, Torunn; Ryningen, Birgit; Stokkan, Gaute.

In: Journal of Applied Physics, Vol. 112, No. 10, 103528, 15.11.2012.

Research output: Contribution to journalArticle

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