On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

Y. Beggah, N. Tabet, R. J. Tarento

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2 Citations (Scopus)

Abstract

A simple approach is proposed to analyse the effect of the carrier recombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the experimental dependence of the collection efficiency on the primary electron beam energy observed for AuGe and PtGe Schottky contacts. The effect of the temperature is discussed.

Original languageEnglish
Pages (from-to)101-104
Number of pages4
JournalMaterials Science and Engineering B
Volume24
Issue number1-3
DOIs
Publication statusPublished - May 1994

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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