On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

Y. Beggah, Nouar Tabet, R. J. Tarento

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A simple approach is proposed to analyse the effect of the carrier recombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the experimental dependence of the collection efficiency on the primary electron beam energy observed for AuGe and PtGe Schottky contacts. The effect of the temperature is discussed.

Original languageEnglish
Pages (from-to)101-104
Number of pages4
JournalMaterials Science and Engineering B
Volume24
Issue number1-3
Publication statusPublished - 1 May 1994
Externally publishedYes

Fingerprint

electric contacts
depletion
Electron beams
electron beams
Temperature
temperature
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact. / Beggah, Y.; Tabet, Nouar; Tarento, R. J.

In: Materials Science and Engineering B, Vol. 24, No. 1-3, 01.05.1994, p. 101-104.

Research output: Contribution to journalArticle

@article{defa28fcc5d24630988c4a0e35aeb32f,
title = "On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact",
abstract = "A simple approach is proposed to analyse the effect of the carrier recombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the experimental dependence of the collection efficiency on the primary electron beam energy observed for AuGe and PtGe Schottky contacts. The effect of the temperature is discussed.",
author = "Y. Beggah and Nouar Tabet and Tarento, {R. J.}",
year = "1994",
month = "5",
day = "1",
language = "English",
volume = "24",
pages = "101--104",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - On the effect of the recombination within the depletion zone on the EBIC signal at Schottky contact

AU - Beggah, Y.

AU - Tabet, Nouar

AU - Tarento, R. J.

PY - 1994/5/1

Y1 - 1994/5/1

N2 - A simple approach is proposed to analyse the effect of the carrier recombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the experimental dependence of the collection efficiency on the primary electron beam energy observed for AuGe and PtGe Schottky contacts. The effect of the temperature is discussed.

AB - A simple approach is proposed to analyse the effect of the carrier recombination within the depletion zone on the collection efficiency of a Schottky contact. A collection velocity is defined at the boarder of the depletion zone. The model allows one to obtain a good fit of the experimental dependence of the collection efficiency on the primary electron beam energy observed for AuGe and PtGe Schottky contacts. The effect of the temperature is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0028430391&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028430391&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0028430391

VL - 24

SP - 101

EP - 104

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -