On-substrate growth of single-walled carbon nanotube networks by an "all-laser" processing route

Brahim Aissa, D. Therriault, M. A. El Khakani

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the process latitude of an "all-laser" approach for the controlled growth of single-walled-carbon-nanotube (SWCNT) mats at predefined locations on silicon substrates. Unlike the conventional laser ablation methods where the SWCNTs are produced in the soot form, from the concomitant ablation of a graphite target loaded with metal catalyst, the "all-laser" process proceeds in two consecutive and independent steps. Indeed, the same KrF pulsed laser is first used to deposit at room temperature, the Co/Ni catalyst nanoparticles (NPs) onto the substrates - of which size and surface density can be controlled by adjusting the number of laser ablation pulses - and subsequently to grow SWCNTs onto the Co/Ni NPs sites, from the laser ablation of a pure graphite target. The grown SWCNT networks are shown to be fairly controllable by choosing the appropriate ratio of "graphite to Co/Ni-NPs" laser ablation pulses. The Co/Ni NPs and the grown SWCNTs were systematically characterized by atomic force microscopy, scanning/tunnelling electron microscopy, Raman spectroscopy and thermogravimetry analysis, and their potential as an active material in thin film transistor was evaluated. Obtained characterization data have led to identify key growth parameters of this novel approach, and to propose growth mechanism models that best describe our observations.

Original languageEnglish
Pages (from-to)2795-2808
Number of pages14
JournalCarbon
Volume49
Issue number8
DOIs
Publication statusPublished - Jul 2011
Externally publishedYes

Fingerprint

Single-walled carbon nanotubes (SWCN)
Laser ablation
Graphite
Nanoparticles
Lasers
Substrates
Processing
Laser pulses
Soot
Catalysts
Scanning tunneling microscopy
Silicon
Thin film transistors
Ablation
Pulsed lasers
Electron microscopy
Raman spectroscopy
Thermogravimetric analysis
Atomic force microscopy
Deposits

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

On-substrate growth of single-walled carbon nanotube networks by an "all-laser" processing route. / Aissa, Brahim; Therriault, D.; El Khakani, M. A.

In: Carbon, Vol. 49, No. 8, 07.2011, p. 2795-2808.

Research output: Contribution to journalArticle

Aissa, Brahim ; Therriault, D. ; El Khakani, M. A. / On-substrate growth of single-walled carbon nanotube networks by an "all-laser" processing route. In: Carbon. 2011 ; Vol. 49, No. 8. pp. 2795-2808.
@article{85deb24462e04b149d2ba77a55310c5c,
title = "On-substrate growth of single-walled carbon nanotube networks by an {"}all-laser{"} processing route",
abstract = "We report on the process latitude of an {"}all-laser{"} approach for the controlled growth of single-walled-carbon-nanotube (SWCNT) mats at predefined locations on silicon substrates. Unlike the conventional laser ablation methods where the SWCNTs are produced in the soot form, from the concomitant ablation of a graphite target loaded with metal catalyst, the {"}all-laser{"} process proceeds in two consecutive and independent steps. Indeed, the same KrF pulsed laser is first used to deposit at room temperature, the Co/Ni catalyst nanoparticles (NPs) onto the substrates - of which size and surface density can be controlled by adjusting the number of laser ablation pulses - and subsequently to grow SWCNTs onto the Co/Ni NPs sites, from the laser ablation of a pure graphite target. The grown SWCNT networks are shown to be fairly controllable by choosing the appropriate ratio of {"}graphite to Co/Ni-NPs{"} laser ablation pulses. The Co/Ni NPs and the grown SWCNTs were systematically characterized by atomic force microscopy, scanning/tunnelling electron microscopy, Raman spectroscopy and thermogravimetry analysis, and their potential as an active material in thin film transistor was evaluated. Obtained characterization data have led to identify key growth parameters of this novel approach, and to propose growth mechanism models that best describe our observations.",
author = "Brahim Aissa and D. Therriault and {El Khakani}, {M. A.}",
year = "2011",
month = "7",
doi = "10.1016/j.carbon.2011.03.006",
language = "English",
volume = "49",
pages = "2795--2808",
journal = "Carbon",
issn = "0008-6223",
publisher = "Elsevier Limited",
number = "8",

}

TY - JOUR

T1 - On-substrate growth of single-walled carbon nanotube networks by an "all-laser" processing route

AU - Aissa, Brahim

AU - Therriault, D.

AU - El Khakani, M. A.

PY - 2011/7

Y1 - 2011/7

N2 - We report on the process latitude of an "all-laser" approach for the controlled growth of single-walled-carbon-nanotube (SWCNT) mats at predefined locations on silicon substrates. Unlike the conventional laser ablation methods where the SWCNTs are produced in the soot form, from the concomitant ablation of a graphite target loaded with metal catalyst, the "all-laser" process proceeds in two consecutive and independent steps. Indeed, the same KrF pulsed laser is first used to deposit at room temperature, the Co/Ni catalyst nanoparticles (NPs) onto the substrates - of which size and surface density can be controlled by adjusting the number of laser ablation pulses - and subsequently to grow SWCNTs onto the Co/Ni NPs sites, from the laser ablation of a pure graphite target. The grown SWCNT networks are shown to be fairly controllable by choosing the appropriate ratio of "graphite to Co/Ni-NPs" laser ablation pulses. The Co/Ni NPs and the grown SWCNTs were systematically characterized by atomic force microscopy, scanning/tunnelling electron microscopy, Raman spectroscopy and thermogravimetry analysis, and their potential as an active material in thin film transistor was evaluated. Obtained characterization data have led to identify key growth parameters of this novel approach, and to propose growth mechanism models that best describe our observations.

AB - We report on the process latitude of an "all-laser" approach for the controlled growth of single-walled-carbon-nanotube (SWCNT) mats at predefined locations on silicon substrates. Unlike the conventional laser ablation methods where the SWCNTs are produced in the soot form, from the concomitant ablation of a graphite target loaded with metal catalyst, the "all-laser" process proceeds in two consecutive and independent steps. Indeed, the same KrF pulsed laser is first used to deposit at room temperature, the Co/Ni catalyst nanoparticles (NPs) onto the substrates - of which size and surface density can be controlled by adjusting the number of laser ablation pulses - and subsequently to grow SWCNTs onto the Co/Ni NPs sites, from the laser ablation of a pure graphite target. The grown SWCNT networks are shown to be fairly controllable by choosing the appropriate ratio of "graphite to Co/Ni-NPs" laser ablation pulses. The Co/Ni NPs and the grown SWCNTs were systematically characterized by atomic force microscopy, scanning/tunnelling electron microscopy, Raman spectroscopy and thermogravimetry analysis, and their potential as an active material in thin film transistor was evaluated. Obtained characterization data have led to identify key growth parameters of this novel approach, and to propose growth mechanism models that best describe our observations.

UR - http://www.scopus.com/inward/record.url?scp=79953792272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953792272&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2011.03.006

DO - 10.1016/j.carbon.2011.03.006

M3 - Article

AN - SCOPUS:79953792272

VL - 49

SP - 2795

EP - 2808

JO - Carbon

JF - Carbon

SN - 0008-6223

IS - 8

ER -