Observation of the double-step single-step transition on a vicinal surface of Si(100)

L. Barbier, A. Khater, B. Salanon, J. Lapujoulade

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Abstract

The Vicinal Si(100) faces have a reconstruction with double or single steps, depending on the miscut of the surface. In our He-atom-scattering experiment, the reconstruction of the Si(1 1 17) face is investigated versus temperature. The miscut (4.76°) is chosen in such a manner that it is above the threshold where the double steps are always formed. A strong structural modification is observed at high temperatures (above 800 K), and is interpreted as the appearance of the single-step reconstruction. Recent theoretical models predicting the transition are considered and a calculation is done on this basis using recently published experimental values of the energy of kinks on steps.

Original languageEnglish
Pages (from-to)14730-14733
Number of pages4
JournalPhysical Review B
Volume43
Issue number18
DOIs
Publication statusPublished - 1991
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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