Observation of the double-step single-step transition on a vicinal surface of Si(100)

L. Barbier, A. Khater, B. Salanon, J. Lapujoulade

Research output: Contribution to journalArticle

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Abstract

The Vicinal Si(100) faces have a reconstruction with double or single steps, depending on the miscut of the surface. In our He-atom-scattering experiment, the reconstruction of the Si(1 1 17) face is investigated versus temperature. The miscut (4.76°) is chosen in such a manner that it is above the threshold where the double steps are always formed. A strong structural modification is observed at high temperatures (above 800 K), and is interpreted as the appearance of the single-step reconstruction. Recent theoretical models predicting the transition are considered and a calculation is done on this basis using recently published experimental values of the energy of kinks on steps.

Original languageEnglish
Pages (from-to)14730-14733
Number of pages4
JournalPhysical Review B
Volume43
Issue number18
DOIs
Publication statusPublished - 1991
Externally publishedYes

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Scattering
Atoms
Temperature
Experiments
thresholds
scattering
atoms
temperature
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Observation of the double-step single-step transition on a vicinal surface of Si(100). / Barbier, L.; Khater, A.; Salanon, B.; Lapujoulade, J.

In: Physical Review B, Vol. 43, No. 18, 1991, p. 14730-14733.

Research output: Contribution to journalArticle

Barbier, L, Khater, A, Salanon, B & Lapujoulade, J 1991, 'Observation of the double-step single-step transition on a vicinal surface of Si(100)', Physical Review B, vol. 43, no. 18, pp. 14730-14733. https://doi.org/10.1103/PhysRevB.43.14730
Barbier, L. ; Khater, A. ; Salanon, B. ; Lapujoulade, J. / Observation of the double-step single-step transition on a vicinal surface of Si(100). In: Physical Review B. 1991 ; Vol. 43, No. 18. pp. 14730-14733.
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