Observation of photobleaching and intensity dependent kinetics in Ge 22As 22Se 56 thin films under sub-bandgap light illumination

Pritam Khan, A. R. Barik, Vinod Madhavan, K. S. Sangunni, K. V. Adarsh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally demonstrate photobleaching (PB) in Ge22As22Se56 thin films, when illuminated with a diode pumped solid state laser (DPSSL) of wavelength 671 nm, which is far below the optical bandgap of the sample. Interestingly, we found that PB is a slow process and occurs even at moderate pump beam intensity of 0.2 W/cm 2, however the kinetics remain rather different.

Original languageEnglish
Title of host publicationIOP Conference Series: Materials Science and Engineering
PublisherInstitute of Physics Publishing
Volume73
Edition1
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventInternational Conference on Materials Science and Technology, ICMST 2012 - Kerala, India
Duration: 10 Jun 201214 Jun 2012

Other

OtherInternational Conference on Materials Science and Technology, ICMST 2012
CountryIndia
CityKerala
Period10/6/1214/6/12

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ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Khan, P., Barik, A. R., Madhavan, V., Sangunni, K. S., & Adarsh, K. V. (2015). Observation of photobleaching and intensity dependent kinetics in Ge 22As 22Se 56 thin films under sub-bandgap light illumination In IOP Conference Series: Materials Science and Engineering (1 ed., Vol. 73). [012073] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/73/1/012073