Nonvolatile memristor memory

Device characteristics and design implications

Yenpo Ho, Garng Morton Huang, Peng Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

198 Citations (Scopus)

Abstract

The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009
Pages485-490
Number of pages6
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009 - San Jose, CA, United States
Duration: 2 Nov 20095 Nov 2009

Other

Other2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009
CountryUnited States
CitySan Jose, CA
Period2/11/095/11/09

Fingerprint

Memristors
Data storage equipment
Networks (circuits)
Electric properties

ASJC Scopus subject areas

  • Software
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

Cite this

Ho, Y., Huang, G. M., & Li, P. (2009). Nonvolatile memristor memory: Device characteristics and design implications. In Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009 (pp. 485-490). [5361250]

Nonvolatile memristor memory : Device characteristics and design implications. / Ho, Yenpo; Huang, Garng Morton; Li, Peng.

Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009. 2009. p. 485-490 5361250.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ho, Y, Huang, GM & Li, P 2009, Nonvolatile memristor memory: Device characteristics and design implications. in Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009., 5361250, pp. 485-490, 2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009, San Jose, CA, United States, 2/11/09.
Ho Y, Huang GM, Li P. Nonvolatile memristor memory: Device characteristics and design implications. In Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009. 2009. p. 485-490. 5361250
Ho, Yenpo ; Huang, Garng Morton ; Li, Peng. / Nonvolatile memristor memory : Device characteristics and design implications. Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009. 2009. pp. 485-490
@inproceedings{71217890b40c455e92326bdb83809edd,
title = "Nonvolatile memristor memory: Device characteristics and design implications",
abstract = "The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found {"}the missing fourth circuit element{"}, memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.",
author = "Yenpo Ho and Huang, {Garng Morton} and Peng Li",
year = "2009",
month = "12",
day = "1",
language = "English",
isbn = "9781605588001",
pages = "485--490",
booktitle = "Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009",

}

TY - GEN

T1 - Nonvolatile memristor memory

T2 - Device characteristics and design implications

AU - Ho, Yenpo

AU - Huang, Garng Morton

AU - Li, Peng

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.

AB - The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.

UR - http://www.scopus.com/inward/record.url?scp=76349087581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76349087581&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781605588001

SP - 485

EP - 490

BT - Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009

ER -