Nonvolatile memristor memory: Device characteristics and design implications

Yenpo Ho, Garng Morton Huang, Peng Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

206 Citations (Scopus)

Abstract

The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found "the missing fourth circuit element", memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009
Pages485-490
Number of pages6
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009 - San Jose, CA, United States
Duration: 2 Nov 20095 Nov 2009

Other

Other2009 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2009
CountryUnited States
CitySan Jose, CA
Period2/11/095/11/09

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ASJC Scopus subject areas

  • Software
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design

Cite this

Ho, Y., Huang, G. M., & Li, P. (2009). Nonvolatile memristor memory: Device characteristics and design implications. In Proceedings of the 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers, ICCAD 2009 (pp. 485-490). [5361250]