New flash-evaporation feeder for chemical vapor deposition

I. S. Chuprakov, J. D. Martin, K. H. Dahmen

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A new device for generation of vapor of solid precursor(s) for the Chemical Vapor Deposition (CVD) process has been designed and tested. Powder of the precursor(s) is kept at room temperature in an inert atmosphere during the deposition and steadily delivered by small portions into an evaporator. Small beads of an inert material are added to the powder in order to dilute the mixture and make the slow powder delivery process more reliable. Flash-evaporation of the precursor(s) from the beads' surface assures controlled and constant in-time composition of the precursor(s) vapor. This facilitates the use of temperature unstable precursors. Simultaneous evaporation of several precursors allows multicomponent films to be easily grown. This process is especially suitable for use of precursors with a big difference in sublimation/evaporation temperatures. The feeder was tested during the CVD of nickel, copper, cobalt, and copper-cobalt thin films. These films were deposited from nickel(II) bisdiethylglyoximate, copper(II) disdipivaloylmethanate, cobalt(II) bisacetylacetoniminate, and cobalt(II) bis-3,5-dimethylpryrazolylborate complexes. The conditions were optimized for the film growing processes in each case. All films were characterized by X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
PublisherEditions de Physique
Volume9 pt 2
Edition8
Publication statusPublished - Sep 1999
Externally publishedYes
EventProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) - Barcelona, Spain
Duration: 5 Sep 199910 Sep 1999

Other

OtherProceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)
CityBarcelona, Spain
Period5/9/9910/9/99

Fingerprint

feeders
flash
cobalt
evaporation
vapor deposition
beads
copper
nickel
vapors
inert atmosphere
evaporators
sublimation
delivery
x rays
photoelectron spectroscopy
scanning electron microscopy
temperature
room temperature
thin films
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chuprakov, I. S., Martin, J. D., & Dahmen, K. H. (1999). New flash-evaporation feeder for chemical vapor deposition. In Journal De Physique. IV : JP (8 ed., Vol. 9 pt 2). Editions de Physique.

New flash-evaporation feeder for chemical vapor deposition. / Chuprakov, I. S.; Martin, J. D.; Dahmen, K. H.

Journal De Physique. IV : JP. Vol. 9 pt 2 8. ed. Editions de Physique, 1999.

Research output: Chapter in Book/Report/Conference proceedingChapter

Chuprakov, IS, Martin, JD & Dahmen, KH 1999, New flash-evaporation feeder for chemical vapor deposition. in Journal De Physique. IV : JP. 8 edn, vol. 9 pt 2, Editions de Physique, Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12), Barcelona, Spain, 5/9/99.
Chuprakov IS, Martin JD, Dahmen KH. New flash-evaporation feeder for chemical vapor deposition. In Journal De Physique. IV : JP. 8 ed. Vol. 9 pt 2. Editions de Physique. 1999
Chuprakov, I. S. ; Martin, J. D. ; Dahmen, K. H. / New flash-evaporation feeder for chemical vapor deposition. Journal De Physique. IV : JP. Vol. 9 pt 2 8. ed. Editions de Physique, 1999.
@inbook{1e697efbd97644049a0b74b6453b81ef,
title = "New flash-evaporation feeder for chemical vapor deposition",
abstract = "A new device for generation of vapor of solid precursor(s) for the Chemical Vapor Deposition (CVD) process has been designed and tested. Powder of the precursor(s) is kept at room temperature in an inert atmosphere during the deposition and steadily delivered by small portions into an evaporator. Small beads of an inert material are added to the powder in order to dilute the mixture and make the slow powder delivery process more reliable. Flash-evaporation of the precursor(s) from the beads' surface assures controlled and constant in-time composition of the precursor(s) vapor. This facilitates the use of temperature unstable precursors. Simultaneous evaporation of several precursors allows multicomponent films to be easily grown. This process is especially suitable for use of precursors with a big difference in sublimation/evaporation temperatures. The feeder was tested during the CVD of nickel, copper, cobalt, and copper-cobalt thin films. These films were deposited from nickel(II) bisdiethylglyoximate, copper(II) disdipivaloylmethanate, cobalt(II) bisacetylacetoniminate, and cobalt(II) bis-3,5-dimethylpryrazolylborate complexes. The conditions were optimized for the film growing processes in each case. All films were characterized by X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy.",
author = "Chuprakov, {I. S.} and Martin, {J. D.} and Dahmen, {K. H.}",
year = "1999",
month = "9",
language = "English",
volume = "9 pt 2",
booktitle = "Journal De Physique. IV : JP",
publisher = "Editions de Physique",
edition = "8",

}

TY - CHAP

T1 - New flash-evaporation feeder for chemical vapor deposition

AU - Chuprakov, I. S.

AU - Martin, J. D.

AU - Dahmen, K. H.

PY - 1999/9

Y1 - 1999/9

N2 - A new device for generation of vapor of solid precursor(s) for the Chemical Vapor Deposition (CVD) process has been designed and tested. Powder of the precursor(s) is kept at room temperature in an inert atmosphere during the deposition and steadily delivered by small portions into an evaporator. Small beads of an inert material are added to the powder in order to dilute the mixture and make the slow powder delivery process more reliable. Flash-evaporation of the precursor(s) from the beads' surface assures controlled and constant in-time composition of the precursor(s) vapor. This facilitates the use of temperature unstable precursors. Simultaneous evaporation of several precursors allows multicomponent films to be easily grown. This process is especially suitable for use of precursors with a big difference in sublimation/evaporation temperatures. The feeder was tested during the CVD of nickel, copper, cobalt, and copper-cobalt thin films. These films were deposited from nickel(II) bisdiethylglyoximate, copper(II) disdipivaloylmethanate, cobalt(II) bisacetylacetoniminate, and cobalt(II) bis-3,5-dimethylpryrazolylborate complexes. The conditions were optimized for the film growing processes in each case. All films were characterized by X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy.

AB - A new device for generation of vapor of solid precursor(s) for the Chemical Vapor Deposition (CVD) process has been designed and tested. Powder of the precursor(s) is kept at room temperature in an inert atmosphere during the deposition and steadily delivered by small portions into an evaporator. Small beads of an inert material are added to the powder in order to dilute the mixture and make the slow powder delivery process more reliable. Flash-evaporation of the precursor(s) from the beads' surface assures controlled and constant in-time composition of the precursor(s) vapor. This facilitates the use of temperature unstable precursors. Simultaneous evaporation of several precursors allows multicomponent films to be easily grown. This process is especially suitable for use of precursors with a big difference in sublimation/evaporation temperatures. The feeder was tested during the CVD of nickel, copper, cobalt, and copper-cobalt thin films. These films were deposited from nickel(II) bisdiethylglyoximate, copper(II) disdipivaloylmethanate, cobalt(II) bisacetylacetoniminate, and cobalt(II) bis-3,5-dimethylpryrazolylborate complexes. The conditions were optimized for the film growing processes in each case. All films were characterized by X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy.

UR - http://www.scopus.com/inward/record.url?scp=0033187876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033187876&partnerID=8YFLogxK

M3 - Chapter

VL - 9 pt 2

BT - Journal De Physique. IV : JP

PB - Editions de Physique

ER -