Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics

X. J. Zhou, L. Tsetseris, Sergey Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, C. D'Emic

Research output: Contribution to journalArticle

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Abstract

The negative bias-temperature instability (NBTI) was compared in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. Similar activation energies for oxide-trap and interface-trap charge formation was found due to NBTI in MOS capacitors with SiO 2 and SiO xN y/HfO 2 gate dielectrics. The results were consistent with the key roles played by hydrogen in MOS defect formation in MOS radiation response and long-term reliability. It was suggested that minimizing excess hydrogen, O vacancies, and/or oxide protrusions into Si may help to reduce NBTI.

Original languageEnglish
Pages (from-to)4394-4396
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number22
DOIs
Publication statusPublished - 31 May 2004
Externally publishedYes

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metal oxides
silicon
traps
oxides
hydrogen
temperature
capacitors
activation energy
defects
radiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhou, X. J., Tsetseris, L., Rashkeev, S., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., ... D'Emic, C. (2004). Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. Applied Physics Letters, 84(22), 4394-4396. https://doi.org/10.1063/1.1757636

Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. / Zhou, X. J.; Tsetseris, L.; Rashkeev, Sergey; Fleetwood, D. M.; Schrimpf, R. D.; Pantelides, S. T.; Felix, J. A.; Gusev, E. P.; D'Emic, C.

In: Applied Physics Letters, Vol. 84, No. 22, 31.05.2004, p. 4394-4396.

Research output: Contribution to journalArticle

Zhou, XJ, Tsetseris, L, Rashkeev, S, Fleetwood, DM, Schrimpf, RD, Pantelides, ST, Felix, JA, Gusev, EP & D'Emic, C 2004, 'Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics', Applied Physics Letters, vol. 84, no. 22, pp. 4394-4396. https://doi.org/10.1063/1.1757636
Zhou, X. J. ; Tsetseris, L. ; Rashkeev, Sergey ; Fleetwood, D. M. ; Schrimpf, R. D. ; Pantelides, S. T. ; Felix, J. A. ; Gusev, E. P. ; D'Emic, C. / Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. In: Applied Physics Letters. 2004 ; Vol. 84, No. 22. pp. 4394-4396.
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