Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics

X. J. Zhou, L. Tsetseris, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, C. D'Emic

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Abstract

The negative bias-temperature instability (NBTI) was compared in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. Similar activation energies for oxide-trap and interface-trap charge formation was found due to NBTI in MOS capacitors with SiO 2 and SiO xN y/HfO 2 gate dielectrics. The results were consistent with the key roles played by hydrogen in MOS defect formation in MOS radiation response and long-term reliability. It was suggested that minimizing excess hydrogen, O vacancies, and/or oxide protrusions into Si may help to reduce NBTI.

Original languageEnglish
Pages (from-to)4394-4396
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number22
DOIs
Publication statusPublished - 31 May 2004

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Zhou, X. J., Tsetseris, L., Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Felix, J. A., Gusev, E. P., & D'Emic, C. (2004). Negative bias-temperature instabilities in metal-oxide-silicon devices with SiO 2 and SiO xN y/HfO 2 gate dielectrics. Applied Physics Letters, 84(22), 4394-4396. https://doi.org/10.1063/1.1757636