Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells

Hossam Elanzeery, Marie Buffière, Khaled Ben Messaoud, Souhaib Oueslati, Guy Brammertz, Ounsi El Daif, David Cheyns, Rafik Guindi, Marc Meuris, Jef Poortmans

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6 Citations (Scopus)

Abstract

Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 μm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values.

Original languageEnglish
Pages (from-to)338-343
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number6
DOIs
Publication statusPublished - 1 Jun 2015

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Keywords

  • Copper silicides
  • Kesterites
  • Photovoltaics
  • Wide band gap absorbers

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Elanzeery, H., Buffière, M., Messaoud, K. B., Oueslati, S., Brammertz, G., Daif, O. E., Cheyns, D., Guindi, R., Meuris, M., & Poortmans, J. (2015). Multistep deposition of Cu2Si(S,Se)3 and Cu2ZnSiSe4high band gap absorber materials for thin film solar cells. Physica Status Solidi - Rapid Research Letters, 9(6), 338-343. https://doi.org/10.1002/pssr.201510125