Multistep deposition of Cu<inf>2</inf>Si(S,Se)<inf>3</inf> and Cu<inf>2</inf>ZnSiSe<inf>4</inf>high band gap absorber materials for thin film solar cells

Hossam Elanzeery, Marie Buffiere, Khaled Ben Messaoud, Souhaib Oueslati, Guy Brammertz, Ounsi El Daif, David Cheyns, Rafik Guindi, Marc Meuris, Jef Poortmans

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Cu<inf>2</inf>ZnSi(S,Se)<inf>4</inf> and Cu<inf>2</inf>Si(S,Se)<inf>3</inf> are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu<inf>2</inf>SiS<inf>3</inf>, Cu<inf>2</inf>SiSe<inf>3</inf>and Cu<inf>2</inf>ZnSiSe<inf>4</inf>thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu<inf>2</inf>Si(S,Se)<inf>3</inf> and Cu<inf>2</inf>ZnSiSe<inf>4</inf>phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 μm. The band gap of the ternary Cu<inf>2</inf>SiSe<inf>3</inf> and Cu<inf>2</inf>SiS<inf>3</inf>, and quaternary Cu<inf>2</inf>ZnSiSe<inf>4</inf> based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values.

Original languageEnglish
Pages (from-to)338-343
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Volume9
Issue number6
DOIs
Publication statusPublished - 1 Jun 2015
Externally publishedYes

Fingerprint

absorbers (materials)
Energy gap
solar cells
Thin films
absorbers
thin films
X ray diffraction analysis
Photoluminescence
Annealing
optical measurement
Scanning electron microscopy
grain size
costs
photoluminescence
Costs
scanning electron microscopy
annealing
diffraction
Thin film solar cells
x rays

Keywords

  • Copper silicides
  • Kesterites
  • Photovoltaics
  • Wide band gap absorbers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)

Cite this

Multistep deposition of Cu<inf>2</inf>Si(S,Se)<inf>3</inf> and Cu<inf>2</inf>ZnSiSe<inf>4</inf>high band gap absorber materials for thin film solar cells. / Elanzeery, Hossam; Buffiere, Marie; Messaoud, Khaled Ben; Oueslati, Souhaib; Brammertz, Guy; Daif, Ounsi El; Cheyns, David; Guindi, Rafik; Meuris, Marc; Poortmans, Jef.

In: Physica Status Solidi - Rapid Research Letters, Vol. 9, No. 6, 01.06.2015, p. 338-343.

Research output: Contribution to journalArticle

Elanzeery, Hossam ; Buffiere, Marie ; Messaoud, Khaled Ben ; Oueslati, Souhaib ; Brammertz, Guy ; Daif, Ounsi El ; Cheyns, David ; Guindi, Rafik ; Meuris, Marc ; Poortmans, Jef. / Multistep deposition of Cu<inf>2</inf>Si(S,Se)<inf>3</inf> and Cu<inf>2</inf>ZnSiSe<inf>4</inf>high band gap absorber materials for thin film solar cells. In: Physica Status Solidi - Rapid Research Letters. 2015 ; Vol. 9, No. 6. pp. 338-343.
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abstract = "Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 μm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values.",
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AU - Brammertz, Guy

AU - Daif, Ounsi El

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AB - Cu2ZnSi(S,Se)4 and Cu2Si(S,Se)3 are potential materials to obtain cost effective high band gap absorbers for tandem thin film solar cell devices. A method to synthesize Cu2SiS3, Cu2SiSe3and Cu2ZnSiSe4thin film absorbers is proposed. This method is based on a multistep process, using sequential deposition and annealing processes. X-ray diffraction analysis performed on the final thin films have confirmed the presence of the Cu2Si(S,Se)3 and Cu2ZnSiSe4phases. Scanning electron microscopy images revealed the formation of polycrystalline layers with grains size up to 1 μm. The band gap of the ternary Cu2SiSe3 and Cu2SiS3, and quaternary Cu2ZnSiSe4 based thin films as determined from optical and photoluminescence measurements are found to be close to their theoretical values.

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