Multi-scale simulation of radiation effects in electronic devices

Ronald D. Schrimpf, Kevin M. Warren, Dennis R. Ball, Robert A. Weller, Robert A. Reed, Daniel M. Fleetwood, Lloyd W. Massengill, Marcus H. Mendenhall, Sergey N. Rashkeev, Sokrates T. Pantelides, Michael A. Alles

Research output: Contribution to journalArticle

11 Citations (Scopus)


As integrated circuits become smaller and more complex, it has become increasingly difficult to simulate their responses to radiation. The distance and time scales of relevance extend over orders of magnitude, requiring a multi-scale, hierarchical simulation approach. This paper demonstrates the use of multi-scale simulations to examine two radiation-related problems: enhanced low-dose-rate sensitivity (ELDRS) in bipolar transistors and single-event effects (SEE) in CMOS integrated circuits. Examples are included that demonstrate how information can be passed from simulation tools operating at one level of abstraction to those operating at higher levels, while maintaining accuracy and gaining insight.

Original languageEnglish
Article number4636954
Pages (from-to)1891-1902
Number of pages12
JournalIEEE Transactions on Nuclear Science
Issue number4
Publication statusPublished - 1 Aug 2008



  • Integrated circuits
  • Multi-scale simulation
  • Radiation
  • Single-event effects
  • Total ionizing dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Schrimpf, R. D., Warren, K. M., Ball, D. R., Weller, R. A., Reed, R. A., Fleetwood, D. M., Massengill, L. W., Mendenhall, M. H., Rashkeev, S. N., Pantelides, S. T., & Alles, M. A. (2008). Multi-scale simulation of radiation effects in electronic devices. IEEE Transactions on Nuclear Science, 55(4), 1891-1902. [4636954].