Multi-scale simulation of radiation effects in electronic devices

Ronald D. Schrimpf, Kevin M. Warren, Dennis R. Ball, Robert A. Weller, Robert A. Reed, Daniel M. Fleetwood, Lloyd W. Massengill, Marcus H. Mendenhall, Sergey Rashkeev, Sokrates T. Pantelides, Michael A. Alles

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

As integrated circuits become smaller and more complex, it has become increasingly difficult to simulate their responses to radiation. The distance and time scales of relevance extend over orders of magnitude, requiring a multi-scale, hierarchical simulation approach. This paper demonstrates the use of multi-scale simulations to examine two radiation-related problems: enhanced low-dose-rate sensitivity (ELDRS) in bipolar transistors and single-event effects (SEE) in CMOS integrated circuits. Examples are included that demonstrate how information can be passed from simulation tools operating at one level of abstraction to those operating at higher levels, while maintaining accuracy and gaining insight.

Original languageEnglish
Article number4636954
Pages (from-to)1891-1902
Number of pages12
JournalIEEE Transactions on Nuclear Science
Volume55
Issue number4
DOIs
Publication statusPublished - 1 Aug 2008
Externally publishedYes

Fingerprint

Radiation effects
radiation effects
CMOS integrated circuits
Radiation
integrated circuits
Bipolar transistors
electronics
Dosimetry
Integrated circuits
simulation
radiation
bipolar transistors
CMOS
dosage

Keywords

  • Integrated circuits
  • Multi-scale simulation
  • Radiation
  • Single-event effects
  • Total ionizing dose

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

Cite this

Schrimpf, R. D., Warren, K. M., Ball, D. R., Weller, R. A., Reed, R. A., Fleetwood, D. M., ... Alles, M. A. (2008). Multi-scale simulation of radiation effects in electronic devices. IEEE Transactions on Nuclear Science, 55(4), 1891-1902. [4636954]. https://doi.org/10.1109/TNS.2008.2000853

Multi-scale simulation of radiation effects in electronic devices. / Schrimpf, Ronald D.; Warren, Kevin M.; Ball, Dennis R.; Weller, Robert A.; Reed, Robert A.; Fleetwood, Daniel M.; Massengill, Lloyd W.; Mendenhall, Marcus H.; Rashkeev, Sergey; Pantelides, Sokrates T.; Alles, Michael A.

In: IEEE Transactions on Nuclear Science, Vol. 55, No. 4, 4636954, 01.08.2008, p. 1891-1902.

Research output: Contribution to journalArticle

Schrimpf, RD, Warren, KM, Ball, DR, Weller, RA, Reed, RA, Fleetwood, DM, Massengill, LW, Mendenhall, MH, Rashkeev, S, Pantelides, ST & Alles, MA 2008, 'Multi-scale simulation of radiation effects in electronic devices', IEEE Transactions on Nuclear Science, vol. 55, no. 4, 4636954, pp. 1891-1902. https://doi.org/10.1109/TNS.2008.2000853
Schrimpf RD, Warren KM, Ball DR, Weller RA, Reed RA, Fleetwood DM et al. Multi-scale simulation of radiation effects in electronic devices. IEEE Transactions on Nuclear Science. 2008 Aug 1;55(4):1891-1902. 4636954. https://doi.org/10.1109/TNS.2008.2000853
Schrimpf, Ronald D. ; Warren, Kevin M. ; Ball, Dennis R. ; Weller, Robert A. ; Reed, Robert A. ; Fleetwood, Daniel M. ; Massengill, Lloyd W. ; Mendenhall, Marcus H. ; Rashkeev, Sergey ; Pantelides, Sokrates T. ; Alles, Michael A. / Multi-scale simulation of radiation effects in electronic devices. In: IEEE Transactions on Nuclear Science. 2008 ; Vol. 55, No. 4. pp. 1891-1902.
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