Multi-axial channeling study of disorder in gold implanted 6H-SiC

W. Jiang, W. J. Weber, S. Thevuthasan, V. Shutthanandan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Single-crystal wafers of 6H-SiC were irradiated at 300 K with 2 MeV Au 2+ ions over fluences ranging from 0.029 to 0.8 ions/nm 2. The accumulated disorder on both the Si and C sublattices in the irradiated specimens has been studied in situ using 0.94 MeV D + channeling along <0001>, <11̄02> and <101̄1> axes. At low doses, results show that some of the Si and C defects are well aligned with the <0001> axis with more C defects shielded by the <0001> atomic rows; a higher level of C disorder is observed, which is consistent with a smaller threshold displacement energy on the C sublattice. There is only a moderate recovery of disorder, produced at and below 0.058 Au 2+/nm 2, during the thermal annealing at 570 K; similar behavior is observed in the higher-dose samples annealed between 720 and 870 K. The results suggest the presence of defect clusters and amorphous domains formed during the Au 2+ irradiation. Reordering processes at 570 K in the weakly damaged 6H-SiC (0.12 Au 2+/nm 2, 300 K) appear to occur closely along the <101̄1> direction.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsA. Argarwal, M. Skowronski, J.A. Cooper, E. Janzen
Volume640
Publication statusPublished - 2001
Externally publishedYes
EventSilicon Carbide- Materials, Processing and Devices - Boston, MA, United States
Duration: 27 Nov 200029 Nov 2000

Other

OtherSilicon Carbide- Materials, Processing and Devices
CountryUnited States
CityBoston, MA
Period27/11/0029/11/00

Fingerprint

Gold
Defects
Ions
Irradiation
Single crystals
Annealing
Recovery
Hot Temperature
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jiang, W., Weber, W. J., Thevuthasan, S., & Shutthanandan, V. (2001). Multi-axial channeling study of disorder in gold implanted 6H-SiC. In A. Argarwal, M. Skowronski, J. A. Cooper, & E. Janzen (Eds.), Materials Research Society Symposium - Proceedings (Vol. 640)

Multi-axial channeling study of disorder in gold implanted 6H-SiC. / Jiang, W.; Weber, W. J.; Thevuthasan, S.; Shutthanandan, V.

Materials Research Society Symposium - Proceedings. ed. / A. Argarwal; M. Skowronski; J.A. Cooper; E. Janzen. Vol. 640 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jiang, W, Weber, WJ, Thevuthasan, S & Shutthanandan, V 2001, Multi-axial channeling study of disorder in gold implanted 6H-SiC. in A Argarwal, M Skowronski, JA Cooper & E Janzen (eds), Materials Research Society Symposium - Proceedings. vol. 640, Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States, 27/11/00.
Jiang W, Weber WJ, Thevuthasan S, Shutthanandan V. Multi-axial channeling study of disorder in gold implanted 6H-SiC. In Argarwal A, Skowronski M, Cooper JA, Janzen E, editors, Materials Research Society Symposium - Proceedings. Vol. 640. 2001
Jiang, W. ; Weber, W. J. ; Thevuthasan, S. ; Shutthanandan, V. / Multi-axial channeling study of disorder in gold implanted 6H-SiC. Materials Research Society Symposium - Proceedings. editor / A. Argarwal ; M. Skowronski ; J.A. Cooper ; E. Janzen. Vol. 640 2001.
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