Monte Carlo Simulation of the recombination contrast of dislocations

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Electron Beam Induced Current (EBIC) contrast of a surface perpendicular dislocation has been calculated using a Monte Carlo algorithm. The dislocation is described as a cylinder with a radius rD. The minority carrier lifetime within the cylinder, TD, is assumed to be smaller than that outside, TB. The dependence of the maximum contrast upon the primary beam energy E0, the carrier lifetimes TD and TB and the dislocation radius TD has been investigated. Our results are compared to those obtained by the analytical approach.

Original languageEnglish
Pages (from-to)89-96
Number of pages8
JournalSolid State Phenomena
Volume63-64
Publication statusPublished - 1 Jan 1998
Externally publishedYes

Fingerprint

Carrier lifetime
carrier lifetime
Induced currents
Electron beams
radii
simulation
minority carriers
electron beams
Monte Carlo simulation
energy

Keywords

  • Dislocations
  • EBIC Contrast
  • Monte Carlo Simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Monte Carlo Simulation of the recombination contrast of dislocations. / Tabet, Nouar.

In: Solid State Phenomena, Vol. 63-64, 01.01.1998, p. 89-96.

Research output: Contribution to journalArticle

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